THE EL2 DEFECT IN GAAS - SOME RECENT DEVELOPMENTS

[1] BACHELET GB, 1984, 17TH P INT C PHYS SE, P755

[2] PHOTORESPONSE OF THE ASGA ANTISITE DEFECT IN AS-GROWN GAAS [J]. APPLIED PHYSICS LETTERS, 1985, 46 (08) : 781 - 783

[3] MODELING THE ELECTRONIC-STRUCTURE OF EL2 [J]. REVUE DE PHYSIQUE APPLIQUEE, 1988, 23 (05): : 817 - 831

[4] ELECTRONIC-STRUCTURE AND BINDING-ENERGY OF THE ASGA-ASI PAIR IN GAAS - EL2 AND THE MOBILITY OF INTERSTITIAL ARSENIC [J]. PHYSICAL REVIEW B, 1987, 35 (12): : 6154 - 6164

[5] BISTABILITY AND METASTABILITY OF THE GALLIUM VACANCY IN GAAS - THE ACTUATOR OF EL2 [J]. PHYSICAL REVIEW LETTERS, 1985, 55 (21) : 2340 - 2343

[6] NEED FOR AN ACCEPTOR LEVEL IN THE ASGA-ASI MODEL FOR EL2 [J]. PHYSICAL REVIEW B, 1987, 35 (11): : 5929 - 5932

[7] BARAFF GA, 1988, 15TH P INT C DEF SEM

[8] BARAFF GA, 1988, DEFECTS ELECTRONIC M, V104, P375

[9] BARAFF GA, 1988, PHYS REV B, V38, P3003

[10] NEUTRON-INDUCED TRAPPING LEVELS IN ALUMINUM GALLIUM-ARSENIDE [J]. JOURNAL OF ELECTRONIC MATERIALS, 1985, 14 (02) : 95 - 118

[1] BACHELET GB, 1984, 17TH P INT C PHYS SE, P755

[2] PHOTORESPONSE OF THE ASGA ANTISITE DEFECT IN AS-GROWN GAAS [J]. APPLIED PHYSICS LETTERS, 1985, 46 (08) : 781 - 783

[3] MODELING THE ELECTRONIC-STRUCTURE OF EL2 [J]. REVUE DE PHYSIQUE APPLIQUEE, 1988, 23 (05): : 817 - 831

[4] ELECTRONIC-STRUCTURE AND BINDING-ENERGY OF THE ASGA-ASI PAIR IN GAAS - EL2 AND THE MOBILITY OF INTERSTITIAL ARSENIC [J]. PHYSICAL REVIEW B, 1987, 35 (12): : 6154 - 6164

[5] BISTABILITY AND METASTABILITY OF THE GALLIUM VACANCY IN GAAS - THE ACTUATOR OF EL2 [J]. PHYSICAL REVIEW LETTERS, 1985, 55 (21) : 2340 - 2343

[6] NEED FOR AN ACCEPTOR LEVEL IN THE ASGA-ASI MODEL FOR EL2 [J]. PHYSICAL REVIEW B, 1987, 35 (11): : 5929 - 5932

[7] BARAFF GA, 1988, 15TH P INT C DEF SEM

[8] BARAFF GA, 1988, DEFECTS ELECTRONIC M, V104, P375

[9] BARAFF GA, 1988, PHYS REV B, V38, P3003

[10] NEUTRON-INDUCED TRAPPING LEVELS IN ALUMINUM GALLIUM-ARSENIDE [J]. JOURNAL OF ELECTRONIC MATERIALS, 1985, 14 (02) : 95 - 118