COMMENTS ON THE MODIFICATION OF SCHOTTKY-BARRIER HEIGHT BY INTERFACIAL OXIDES

被引：12

作者：

MORGAN, DV

FREY, J

机构：

[1] School of Electrical Engineering, Cornell University, Ithaca

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1979年 / 51卷 / 01期

关键词：

D O I：

10.1002/pssa.2210510143

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

[No abstract available]

引用

页码：K29 / K33

页数：5

共 14 条

[1]

ASHOK S, 1978, ELECTRONICS LETT

[2]

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CARD, HC .

SOLID-STATE ELECTRONICS, 1975, 18 (10) :881-883

[4] EFFECT OF AN INTERFACIAL LAYER ON MINORITY-CARRIER INJECTION IN FORWARD-BIASED SILICON SCHOTTKY DIODES [J].

CARD, HC ;

RHODERICK, EH .

SOLID-STATE ELECTRONICS, 1973, 16 (03) :365-374

[5] PHOTOVOLTAIC PROPERTIES OF MIS-SCHOTTKY BARRIERS [J].

CARD, HC .

SOLID-STATE ELECTRONICS, 1977, 20 (12) :971-976

[6] SURFACE STATES AND BARRIER HEIGHT OF METAL-SEMICONDUCTOR SYSTEMS [J].

COWLEY, AM ;

SZE, SM .

JOURNAL OF APPLIED PHYSICS, 1965, 36 (10) :3212-&

[7] TUNNELING IN METAL-OXIDE-SILICON STRUCTURES [J].

DAHLKE, WE ;

SZE, SM .

SOLID-STATE ELECTRONICS, 1967, 10 (08) :865-&

[8]

MORGAN DP, UNPUBLISHED

[9]

MORGAN DV, 1978, J PHYS D, V11

[10] INFLUENCE OF A THIN OXIDE LAYER BETWEEN METAL AND SEMICONDUCTOR ON SCHOTTKY DIODE BEHAVIOR [J].

NICOLLIAN, EH ;

SCHWARTZ, B ;

COLEMAN, DJ ;

RYDER, RM ;

BREWS, JR .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1976, 13 (05) :1047-1055

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