THERMAL-STABILITY AND ELECTRICAL-PROPERTIES OF HYDROGENATED AMORPHOUS-CARBON FILM

被引：13

作者：

CALLEGARI, A ^{[1
]}

BUCHANAN, DA ^{[1
]}

HOVEL, H ^{[1
]}

SIMONYI, E ^{[1
]}

MARWICK, A ^{[1
]}

LUSTIG, NE ^{[1
]}

机构：

[1] IBM CORP,DIV GEN TECHNOL,HOPEWELL JCT,NY 12533

来源：

APPLIED PHYSICS LETTERS | 1994年 / 65卷 / 25期

关键词：

D O I：

10.1063/1.112440

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The thermal stability of a plasma-deposited amorphous carbon film was enhanced by using acetylene heavily diluted with He. The film preserved its hardness even after annealing at ≅590°C in Ar/H2, while a film deposited in similar conditions in an acetylene/Ar mixture softened significantly. The I-V characteristics of n- and p-type Si/amorphous carbon heterojunctions showed a 0.2 eV discrepancy. This is attributed to an offset in the conduction band of the amorphous carbon with respect to Si. © 1994 American Institute of Physics.

引用

页码：3200 / 3202

页数：3

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