SURFACE KINETICS OF CHEMICAL BEAM EPITAXY OF GAAS

被引：14

作者：

LIANG, BW

TU, CW

机构：

来源：

APPLIED PHYSICS LETTERS | 1990年 / 57卷 / 07期

关键词：

D O I：

10.1063/1.103593

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A new kinetic model for chemical beam epitaxy of GaAs using triethylgallium and arsine is proposed. Both group III and group V species are equally important in the surface reactions. This model can fit experimental data very well. Various aspects of the growth rate as a function of substrate temperature, triethylgallium and arsine flow rates are examined.

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页码：689 / 691

页数：3

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