REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION STUDY OF METALORGANIC MOLECULAR-BEAM EPITAXY OF GAAS USING TRIMETHYLGALLIUM AND ARSENIC

被引：7

作者：

LIANG, BW

CHIN, TP

TU, CW

机构：

[1] Department of Electrical and Computer Engineering, University of California at San Diego, San Diego

来源：

JOURNAL OF APPLIED PHYSICS | 1990年 / 67卷 / 09期

关键词：

D O I：

10.1063/1.344914

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The growth behavior of metalorganic molecular-beam epitaxial (MOMBE) growth of GaAs using trimethylgallium and solid arsenic is studied by the intensity oscillation behavior of reflection high-energy electron-diffraction (RHEED). The growth process is more complicated than conventional MBE using elemental sources. In MOMBE the growth rate depends not only on the substrate temperature but also on the arsenic pressure. In addition, the RHEED behavior indicates a possibility of atomic layer epitaxy using trimethylgallium.

引用

页码：4393 / 4395

页数：3

共 18 条

[1] GALLIUM-INDUCED AND ARSENIC-INDUCED OSCILLATIONS OF INTENSITY OF REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION IN THE GROWTH OF (001) GAAS BY CHEMICAL BEAM EPITAXY [J].