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PHOTOCAPACITANCE STUDY OF N-GAAS ELECTROLYTE INTERFACES
被引:32
作者
:
ALLONGUE, P
论文数:
0
引用数:
0
h-index:
0
ALLONGUE, P
CACHET, H
论文数:
0
引用数:
0
h-index:
0
CACHET, H
机构
:
来源
:
BERICHTE DER BUNSEN-GESELLSCHAFT-PHYSICAL CHEMISTRY CHEMICAL PHYSICS
|
1987年
/ 91卷
/ 04期
关键词
:
D O I
:
10.1002/bbpc.19870910430
中图分类号
:
O64 [物理化学(理论化学)、化学物理学];
学科分类号
:
070304 ;
081704 ;
摘要
:
引用
收藏
页码:386 / 390
页数:5
相关论文
共 13 条
[1]
PHOTODISSOLUTION KINETICS OF N-GAAS IN 1M KOH AND CALCULATION OF THE STABILIZATION BY SE-2- - EFFECT OF THE RU-3+ SURFACE-TREATMENT
ALLONGUE, P
论文数:
0
引用数:
0
h-index:
0
机构:
CNRS, Groupe de Recherche, Paris, Fr, CNRS, Groupe de Recherche, Paris, Fr
ALLONGUE, P
CACHET, H
论文数:
0
引用数:
0
h-index:
0
机构:
CNRS, Groupe de Recherche, Paris, Fr, CNRS, Groupe de Recherche, Paris, Fr
CACHET, H
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1984,
131
(12)
: 2861
-
2868
[2]
BAND-EDGE SHIFT AND SURFACE-CHARGES AT ILLUMINATED N-GAAS AQUEOUS-ELECTROLYTE JUNCTIONS - SURFACE-STATE ANALYSIS AND SIMULATION OF THEIR OCCUPATION RATE
ALLONGUE, P
论文数:
0
引用数:
0
h-index:
0
ALLONGUE, P
CACHET, H
论文数:
0
引用数:
0
h-index:
0
CACHET, H
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1985,
132
(01)
: 45
-
52
[3]
CHEMICALLY-INDUCED INTERFACE STATES IN PHOTO-ELECTROCHEMICAL CELLS
BUTLER, MA
论文数:
0
引用数:
0
h-index:
0
BUTLER, MA
GINLEY, DS
论文数:
0
引用数:
0
h-index:
0
GINLEY, DS
[J].
APPLIED PHYSICS LETTERS,
1983,
42
(07)
: 582
-
584
[4]
PHOTOCURRENT SPECTROSCOPY OF INTERFACE STATES AT A SEMICONDUCTOR-ELECTROLYTE JUNCTION
CHAZALVIEL, JN
论文数:
0
引用数:
0
h-index:
0
CHAZALVIEL, JN
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1980,
127
(08)
: 1822
-
1826
[5]
INVESTIGATION OF PHOTOELECTROCHEMICAL CORROSION OF SEMICONDUCTORS .1.
FRESE, KW
论文数:
0
引用数:
0
h-index:
0
FRESE, KW
MADOU, MJ
论文数:
0
引用数:
0
h-index:
0
MADOU, MJ
MORRISON, SR
论文数:
0
引用数:
0
h-index:
0
MORRISON, SR
[J].
JOURNAL OF PHYSICAL CHEMISTRY,
1980,
84
(24)
: 3172
-
3178
[6]
INVESTIGATION OF PHOTOELECTROCHEMICAL CORROSION OF SEMICONDUCTORS .2. KINETIC-ANALYSIS OF CORROSION-COMPETITION REACTIONS ON N-GAAS
FRESE, KW
论文数:
0
引用数:
0
h-index:
0
FRESE, KW
MADOU, MJ
论文数:
0
引用数:
0
h-index:
0
MADOU, MJ
MORRISON, SR
论文数:
0
引用数:
0
h-index:
0
MORRISON, SR
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1981,
128
(07)
: 1527
-
1531
[7]
PHOTOCAPACITANCE SPECTROSCOPY OF SURFACE-STATES ON INDIUM-PHOSPHIDE PHOTOELECTRODES
GOODMAN, CE
论文数:
0
引用数:
0
h-index:
0
机构:
NORTHWESTERN UNIV,MAT RES CTR,EVANSTON,IL 60201
GOODMAN, CE
WESSELS, BW
论文数:
0
引用数:
0
h-index:
0
机构:
NORTHWESTERN UNIV,MAT RES CTR,EVANSTON,IL 60201
WESSELS, BW
ANG, PGP
论文数:
0
引用数:
0
h-index:
0
机构:
NORTHWESTERN UNIV,MAT RES CTR,EVANSTON,IL 60201
ANG, PGP
[J].
APPLIED PHYSICS LETTERS,
1984,
45
(04)
: 442
-
444
[8]
ELECTROCHEMICAL PHOTOCAPACITANCE SPECTROSCOPY METHOD FOR CHARACTERIZATION OF DEEP LEVELS AND INTERFACE STATES IN SEMICONDUCTOR-MATERIALS
HAAK, R
论文数:
0
引用数:
0
h-index:
0
HAAK, R
TENCH, D
论文数:
0
引用数:
0
h-index:
0
TENCH, D
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1984,
131
(02)
: 275
-
283
[9]
HOLE INJECTION REACTIONS AND THE POTENTIAL DISTRIBUTION AT THE PARA-GAAS/ELECTROLYTE INTERFACE UNDER ANODIC POLARIZATION
KELLY, JJ
论文数:
0
引用数:
0
h-index:
0
KELLY, JJ
NOTTEN, PHL
论文数:
0
引用数:
0
h-index:
0
NOTTEN, PHL
[J].
ELECTROCHIMICA ACTA,
1984,
29
(05)
: 589
-
596
[10]
RUTHENIUM-INDUCED SURFACE-STATES ON N-GAAS SURFACES
LUDWIG, M
论文数:
0
引用数:
0
h-index:
0
机构:
HUMBOLDT UNIV,DEPT CHEM,DDR-1040 BERLIN,GER DEM REP
HUMBOLDT UNIV,DEPT CHEM,DDR-1040 BERLIN,GER DEM REP
LUDWIG, M
HEYMANN, G
论文数:
0
引用数:
0
h-index:
0
机构:
HUMBOLDT UNIV,DEPT CHEM,DDR-1040 BERLIN,GER DEM REP
HUMBOLDT UNIV,DEPT CHEM,DDR-1040 BERLIN,GER DEM REP
HEYMANN, G
JANIETZ, P
论文数:
0
引用数:
0
h-index:
0
机构:
HUMBOLDT UNIV,DEPT CHEM,DDR-1040 BERLIN,GER DEM REP
HUMBOLDT UNIV,DEPT CHEM,DDR-1040 BERLIN,GER DEM REP
JANIETZ, P
[J].
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B,
1986,
4
(02):
: 485
-
492
←
1
2
→
共 13 条
[1]
PHOTODISSOLUTION KINETICS OF N-GAAS IN 1M KOH AND CALCULATION OF THE STABILIZATION BY SE-2- - EFFECT OF THE RU-3+ SURFACE-TREATMENT
ALLONGUE, P
论文数:
0
引用数:
0
h-index:
0
机构:
CNRS, Groupe de Recherche, Paris, Fr, CNRS, Groupe de Recherche, Paris, Fr
ALLONGUE, P
CACHET, H
论文数:
0
引用数:
0
h-index:
0
机构:
CNRS, Groupe de Recherche, Paris, Fr, CNRS, Groupe de Recherche, Paris, Fr
CACHET, H
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1984,
131
(12)
: 2861
-
2868
[2]
BAND-EDGE SHIFT AND SURFACE-CHARGES AT ILLUMINATED N-GAAS AQUEOUS-ELECTROLYTE JUNCTIONS - SURFACE-STATE ANALYSIS AND SIMULATION OF THEIR OCCUPATION RATE
ALLONGUE, P
论文数:
0
引用数:
0
h-index:
0
ALLONGUE, P
CACHET, H
论文数:
0
引用数:
0
h-index:
0
CACHET, H
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1985,
132
(01)
: 45
-
52
[3]
CHEMICALLY-INDUCED INTERFACE STATES IN PHOTO-ELECTROCHEMICAL CELLS
BUTLER, MA
论文数:
0
引用数:
0
h-index:
0
BUTLER, MA
GINLEY, DS
论文数:
0
引用数:
0
h-index:
0
GINLEY, DS
[J].
APPLIED PHYSICS LETTERS,
1983,
42
(07)
: 582
-
584
[4]
PHOTOCURRENT SPECTROSCOPY OF INTERFACE STATES AT A SEMICONDUCTOR-ELECTROLYTE JUNCTION
CHAZALVIEL, JN
论文数:
0
引用数:
0
h-index:
0
CHAZALVIEL, JN
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1980,
127
(08)
: 1822
-
1826
[5]
INVESTIGATION OF PHOTOELECTROCHEMICAL CORROSION OF SEMICONDUCTORS .1.
FRESE, KW
论文数:
0
引用数:
0
h-index:
0
FRESE, KW
MADOU, MJ
论文数:
0
引用数:
0
h-index:
0
MADOU, MJ
MORRISON, SR
论文数:
0
引用数:
0
h-index:
0
MORRISON, SR
[J].
JOURNAL OF PHYSICAL CHEMISTRY,
1980,
84
(24)
: 3172
-
3178
[6]
INVESTIGATION OF PHOTOELECTROCHEMICAL CORROSION OF SEMICONDUCTORS .2. KINETIC-ANALYSIS OF CORROSION-COMPETITION REACTIONS ON N-GAAS
FRESE, KW
论文数:
0
引用数:
0
h-index:
0
FRESE, KW
MADOU, MJ
论文数:
0
引用数:
0
h-index:
0
MADOU, MJ
MORRISON, SR
论文数:
0
引用数:
0
h-index:
0
MORRISON, SR
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1981,
128
(07)
: 1527
-
1531
[7]
PHOTOCAPACITANCE SPECTROSCOPY OF SURFACE-STATES ON INDIUM-PHOSPHIDE PHOTOELECTRODES
GOODMAN, CE
论文数:
0
引用数:
0
h-index:
0
机构:
NORTHWESTERN UNIV,MAT RES CTR,EVANSTON,IL 60201
GOODMAN, CE
WESSELS, BW
论文数:
0
引用数:
0
h-index:
0
机构:
NORTHWESTERN UNIV,MAT RES CTR,EVANSTON,IL 60201
WESSELS, BW
ANG, PGP
论文数:
0
引用数:
0
h-index:
0
机构:
NORTHWESTERN UNIV,MAT RES CTR,EVANSTON,IL 60201
ANG, PGP
[J].
APPLIED PHYSICS LETTERS,
1984,
45
(04)
: 442
-
444
[8]
ELECTROCHEMICAL PHOTOCAPACITANCE SPECTROSCOPY METHOD FOR CHARACTERIZATION OF DEEP LEVELS AND INTERFACE STATES IN SEMICONDUCTOR-MATERIALS
HAAK, R
论文数:
0
引用数:
0
h-index:
0
HAAK, R
TENCH, D
论文数:
0
引用数:
0
h-index:
0
TENCH, D
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1984,
131
(02)
: 275
-
283
[9]
HOLE INJECTION REACTIONS AND THE POTENTIAL DISTRIBUTION AT THE PARA-GAAS/ELECTROLYTE INTERFACE UNDER ANODIC POLARIZATION
KELLY, JJ
论文数:
0
引用数:
0
h-index:
0
KELLY, JJ
NOTTEN, PHL
论文数:
0
引用数:
0
h-index:
0
NOTTEN, PHL
[J].
ELECTROCHIMICA ACTA,
1984,
29
(05)
: 589
-
596
[10]
RUTHENIUM-INDUCED SURFACE-STATES ON N-GAAS SURFACES
LUDWIG, M
论文数:
0
引用数:
0
h-index:
0
机构:
HUMBOLDT UNIV,DEPT CHEM,DDR-1040 BERLIN,GER DEM REP
HUMBOLDT UNIV,DEPT CHEM,DDR-1040 BERLIN,GER DEM REP
LUDWIG, M
HEYMANN, G
论文数:
0
引用数:
0
h-index:
0
机构:
HUMBOLDT UNIV,DEPT CHEM,DDR-1040 BERLIN,GER DEM REP
HUMBOLDT UNIV,DEPT CHEM,DDR-1040 BERLIN,GER DEM REP
HEYMANN, G
JANIETZ, P
论文数:
0
引用数:
0
h-index:
0
机构:
HUMBOLDT UNIV,DEPT CHEM,DDR-1040 BERLIN,GER DEM REP
HUMBOLDT UNIV,DEPT CHEM,DDR-1040 BERLIN,GER DEM REP
JANIETZ, P
[J].
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B,
1986,
4
(02):
: 485
-
492
←
1
2
→