MONITORING OF LOW-DOSE ION-IMPLANTATION IN SILICON

被引：10

作者：

HARA, T

HAGIWARA, H

ICHIKAWA, R

NAKASHIMA, S

MIZOGUCHI, K

SMITH, WL

WELLES, C

HAHN, SK

LARSON, L

机构：

[1] THERMA WAVE INC,FREMONT,CA 94539

[2] SILTEC INC,MENLO PK,CA 94025

[3] OSAKA UNIV,DEPT APPL PHYS,SUITA,OSAKA 565,JAPAN

[4] NATL SEMICOND CORP,SANTA CLARA,CA 95051

来源：

IEEE ELECTRON DEVICE LETTERS | 1990年 / 11卷 / 11期

关键词：

D O I：

10.1109/55.63008

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Monitoring of low-dose arsenic or boron ion implantation (doses: 5 × 1010 to 1 × 1013 cm−2) in silicon, which is required for threshold voltage control of MOS transistors, is studied. The thermalwave (TW) signal intensity decreases monotonically with decreasing dose. The lowest detection limit of dose for As+ and B+ implantations is 5 × 1010 and 1 × 1011 cm−2, respectively. Correlation of the TW signal intensity versus damage density, TW intensity versus dose, and laser Raman intensity versus dose is obtained. The TW intensity is also correlated with the sheet conductance and the threshold voltage of transistor. Therefore, this technique is useful as a nondestructive, highly sensitive dose monitor for low-dose implantation to achieve tight threshold voltage control in MOS transistors. © 1990 IEEE

引用

页码：485 / 486

页数：2

共 4 条

[1] DAMAGE FORMED BY ION-IMPLANTATION IN SILICON EVALUATED BY DISPLACED ATOM DENSITY AND THERMAL WAVE SIGNAL [J].