AMORPHIZATION AND RECRYSTALLIZATION OF 6H-SIC BY ION-BEAM IRRADIATION

被引：150

作者：

HEERA, V ^{[1
]}

STOEMENOS, J ^{[1
]}

KOGLER, R ^{[1
]}

SKORUPA, W ^{[1
]}

机构：

[1] ARISTOTELIAN UNIV THESSALONIKI,DEPT PHYS,GR-54006 THESSALONIKI,GREECE

来源：

JOURNAL OF APPLIED PHYSICS | 1995年 / 77卷 / 07期

关键词：

D O I：

10.1063/1.358649

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Amorphization of 6H-SiC with 200 keV Ge+ ions at room temperature and subsequent ion-beam-induced epitaxial crystallization (IBIEC) with 300 keV Si+ ions at 480°C have been studied by Rutherford backscattering spectrometry/channeling and transmission electron microscopy analysis. Experimental results on amorphous layer thicknesses have been compared with trim calculations in association with the critical energy density model. Density changes during amorphization have been observed by step height measurements. Particular attention has been directed to the crystal quality and a possible polytype transformation during the IBIEC regrowth. The IBIEC process consists of two stages and results in a multilayer structure. In the initial phase an epitaxial growth of 6H-SiC has been obtained. With increasing IBIEC dose the epitaxial growth changes to columnar growth and is stopped by polycrystallization of 3C polytype in the near-surface region. © 1995 American Institute of Physics.

引用

页码：2999 / 3009

页数：11

共 34 条

[1]

Bohn H. G., 1987, Journal of Materials Research, V2, P107, DOI 10.1557/JMR.1987.0107

[2] DAMAGE AND ALUMINUM DISTRIBUTIONS IN SIC DURING ION-IMPLANTATION AND ANNEALING [J].

CHECHENIN, NG ;

BOURDELLE, KK ;

SUVOROV, AV ;

KASTILIOVITLOCH, AX .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1992, 65 (1-4) :341-344

[3]

CHECHENIN NG, 1990, NUCL INSTRUM METH B, V48, P234

[4] EPITAXIAL-GROWTH AND DOPING OF AND DEVICE DEVELOPMENT IN MONOCRYSTALLINE BETA-SIC SEMICONDUCTOR THIN-FILMS [J].

DAVIS, RF .

THIN SOLID FILMS, 1989, 181 :1-15

[5]

DAVIS RF, 1991, ADV SOLID STATE CHEM, V2, P1

[6]

EDMOND JA, 1986, MATER RES SOC S P, V51, P395

[7] ION-BEAM INDUCED EPITAXIAL CRYSTALLIZATION OF GEXSI1-X/SI STRUCTURES [J].

ELLIMAN, RG ;

RIDGWAY, MC ;

WILLIAMS, JS ;

BEAN, JC .

APPLIED PHYSICS LETTERS, 1989, 55 (09) :843-845

[8] SPECTRAL STUDY OF NE+-BOMBARDED CRYSTALLINE MGO [J].

EVANS, BD .

PHYSICAL REVIEW B, 1974, 9 (12) :5222-5235

[9] A RUTHERFORD BACKSCATTERING STUDY OF AR-IMPLANTED AND XE-IMPLANTED SILICON-CARBIDE [J].

FOHL, A ;

EMRICK, RM ;

CARSTANJEN, HD .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1992, 65 (1-4) :335-340

[10]

GEVERS R, 1988, PHYS STATUS SOLIDI, V26, P577

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