THRESHOLD VOLTAGE OF SUB-MICRON GA0.47IN0.53AS HIGFETS

被引：3

作者：

FEUER, MD

SHUNK, SC

KUO, JM

TENNANT, DM

TELL, B

机构：

来源：

ELECTRONICS LETTERS | 1989年 / 25卷 / 15期

关键词：

D O I：

10.1049/el:19890652

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：975 / 976

页数：2

共 6 条

[1]

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[2]

FEUER MD, 1980, IEEE T ELECTRON DEV, V33, P1640

[3] CURRENT-GAIN CUTOFF FREQUENCY COMPARISON OF INGAAS HEMTS [J].

HIKOSAKA, K ;

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KURODA, S .

IEEE ELECTRON DEVICE LETTERS, 1988, 9 (05) :241-243

[4] W/WSI GATE SELF-ALIGNED HIFETS (HETEROINTERFACE FETS) USING AN ALINAS/GAINAS HETEROSTRUCTURE GROWN BY MOCVD [J].

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ISHIKAWA, H ;

KANEKO, K ;

WATANABE, N .

ELECTRONICS LETTERS, 1988, 24 (05) :271-272

[5] MICROWAVE PERFORMANCE OF A1INAS-GAINAS HEMTS WITH 0.2-MU-M AND 0.1-MU-M GATE LENGTH [J].

MISHRA, UK ;

BROWN, AS ;

ROSENBAUM, SE ;

HOOPER, CE ;

PIERCE, MW ;

DELANEY, MJ ;

VAUGHN, S ;

WHITE, K .

IEEE ELECTRON DEVICE LETTERS, 1988, 9 (12) :647-649

[6] ELECTRON-BEAM FABRICATION OF HIGH-PERFORMANCE INGAAS/INAIAS HETEROJUNCTION INSULATED GATE FIELD-EFFECT TRANSISTORS WITH SUB-MICRON REFRACTORY AIRBRIDGE GATES [J].

TENNANT, DM ;

SHUNK, SC ;

FEUER, MD ;

KUO, JM ;

TELL, B ;

BEHRINGER, RE ;

CHANG, TY .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1988, 6 (06) :1820-1823

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