TUNABLE GUNN OSCILLATOR BY SEMICONDUCTOR SURFACE LOADING

被引：2

作者：

TESZNER, JL

机构：

来源：

ELECTRONICS LETTERS | 1971年 / 7卷 / 07期

关键词：

D O I：

10.1049/el:19710094

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：146 / &

共 11 条

[1] MAGNETIC SURFACE LOADING OF GUNN OSCILLATORS AND RESULTING NEW DEVICES [J].

HARTNAGEL, HL .

SOLID-STATE ELECTRONICS, 1970, 13 (07) :931-+

[2] A WIDE-RANGE VARIABLE-FREQUENCY GUNN OSCILLATOR [J].

HAYDL, WH .

APPLIED PHYSICS LETTERS, 1968, 12 (10) :357-&

[3] SOME ASPECTS OF GUNN OSCILLATIONS IN THIN DIELECTRIC-LOADED SAMPLES [J].

HOFMANN, KR .

ELECTRONICS LETTERS, 1969, 5 (11) :227-&

[4] SUPPRESSION OF TRAVELLING HIGH-FIELD-DOMAIN MODE OSCILLATIONS IN GAAS BY DIELECTRIC SURFACE LOADING [J].

KATAOKA, S ;

TATENO, H ;

KAWASHIM.M .

ELECTRONICS LETTERS, 1969, 5 (03) :48-&

[5] OBSERVATION OF MULTIPLE HIGH-FIELD DOMAINS IN A DIELECTRIC-SURFACE-LOADED GAAS BULK ELEMENT [J].

KAWASHIMA, M ;

KATAOKA, S .

ELECTRONICS LETTERS, 1969, 5 (19) :455-+

[6]

KINO GS, 1969, IEEE T, VED16, P735

[7] DYNAMICS OF HIGH-FIELD PROPAGATING DOMAINS IN BULK SEMICONDUCTORS [J].

KUROKAWA, K .

BELL SYSTEM TECHNICAL JOURNAL, 1967, 46 (10) :2235-+

[8] DOMAIN SUPPRESSION IN GUNN DIODES [J].

KURU, I ;

TAJIMA, Y .

PROCEEDINGS OF THE IEEE, 1969, 57 (06) :1215-+

[9] VARIABLE-LENGTH GUNN OSCILLATOR [J].

MYERS, FA ;

MCSTAY, J ;

TAYLOR, BC .

ELECTRONICS LETTERS, 1968, 4 (18) :386-&

[10] A VOLTAGE TUNABLE GUNN-EFFECT OSCILLATOR [J].

SHOJI, M .

PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1967, 55 (01) :130-+

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