PHOTOMODULATION STUDY OF PARTIALLY STRAINED INXGA1-XAS LAYERS

被引：12

作者：

CHEN, JH

CHI, WS

HUANG, YS

YIN, Y

POLLAK, FH

PETTIT, GD

WOODALL, JM

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

[2] CUNY BROOKLYN COLL,DEPT PHYS,BROOKLYN,NY 11210

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1993年 / 8卷 / 07期

关键词：

D O I：

10.1088/0268-1242/8/7/036

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Photomodulation techniques have been used to study the fundamental transitions of partially strained InxGa1-xAs/GaAs (x = 0.07 and 0.16) epilayers. The strain-induced splitting of the valence band was observed. The identification of the split valence bands was confirmed using linearly polarized photoreflectance under a total internal reflection mode. The temperature dependence of two bandgap energies E01 (heavy-hole band) and E02 (light-hole band) was studied over a temperature range from 15 to 300 K. The parameters that describe the temperature dependence of E01 and E02 as well as the broadening function are evaluated.

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页码：1420 / 1425

页数：6

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