PHOTOMODULATION STUDY OF PARTIALLY STRAINED INXGA1-XAS LAYERS

被引:12
作者
CHEN, JH
CHI, WS
HUANG, YS
YIN, Y
POLLAK, FH
PETTIT, GD
WOODALL, JM
机构
[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
[2] CUNY BROOKLYN COLL,DEPT PHYS,BROOKLYN,NY 11210
关键词
D O I
10.1088/0268-1242/8/7/036
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Photomodulation techniques have been used to study the fundamental transitions of partially strained InxGa1-xAs/GaAs (x = 0.07 and 0.16) epilayers. The strain-induced splitting of the valence band was observed. The identification of the split valence bands was confirmed using linearly polarized photoreflectance under a total internal reflection mode. The temperature dependence of two bandgap energies E01 (heavy-hole band) and E02 (light-hole band) was studied over a temperature range from 15 to 300 K. The parameters that describe the temperature dependence of E01 and E02 as well as the broadening function are evaluated.
引用
收藏
页码:1420 / 1425
页数:6
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