MIGRATION-ENHANCED EPITAXY OF DOPED GAAS ON (111)B AND (100)GAAS SUBSTRATES

被引：6

作者：

FU, JM

ZHANG, K

MILLER, DL

机构：

[1] PENN STATE UNIV,DEPT MAT SCI & ENGN,CTR ELECTR MAT & PROC,UNIV PK,PA 16802

[2] PENN STATE UNIV,DEPT ELECT & COMP ENGN,CTR ELECTR MAT & PROC,UNIV PK,PA 16802

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1992年 / 10卷 / 02期

关键词：

D O I：

10.1116/1.586114

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Si-doped n-type GaAs and Be-doped p-type GaAs have been grown on (111)B oriented GaAs substrates using the migration-enhanced epitaxy (MEE) technique, in which arsenic and gallium are deposited separately. The mobilities and carrier densities have been compared with GaAs grown by MEE and conventional epitaxy on GaAs (100) substrates. Under migration enhanced conditions, the range of substrate temperatures and arsenic fluxes to obtain smooth surfaces and good mobilities is wider than for conventional molecular-beam epitaxy, for both substrate orientations. High-quality doped GaAs material was obtained at substrate temperature as low as 400-450-degrees-C on (111)B substrates.

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页码：779 / 782

页数：4

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