DETERMINATION OF MOLECULAR-BEAM EPITAXIAL-GROWTH PARAMETERS BY ELLIPSOMETRY

被引：11

作者：

DROOPAD, R

KUO, CH

ANAND, S

CHOI, KY

MARACAS, GN

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1994年 / 12卷 / 02期

关键词：

D O I：

10.1116/1.587046

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The use of ellipsometry as an alternative technique for in situ determination of molecular beam epitaxial growth parameters has been demonstrated. Epitaxial growth has been monitored in real time using three discrete wavelengths to extract growth rates and alloy composition. The effect of substrate rotation on the measured growth rates has also been determined by this technique. From measurements of the GaAs growth rates versus substrate temperature, a value of 4.68+/-0.12 eV for the activation energy for Ga desorption during GaAs growth was obtained. This agrees with values obtained by other measurement techniques.

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页码：1211 / 1213

页数：3

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