CRACKS IN INP-BASED HETEROSTRUCTURES

被引：22

作者：

FRANZOSI, P ^{[1
]}

SALVIATI, G ^{[1
]}

SCAFFARDI, M ^{[1
]}

GENOVA, F ^{[1
]}

PELLEGRINO, S ^{[1
]}

STANO, A ^{[1
]}

机构：

[1] CSELT LAB,I-10148 TORINO,ITALY

来源：

JOURNAL OF CRYSTAL GROWTH | 1988年 / 88卷 / 01期

关键词：

D O I：

10.1016/S0022-0248(98)90015-X

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：135 / 142

页数：8

共 19 条

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[2]

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[3] ASYMMETRY OF MISFIT DISLOCATIONS IN HETEROEPITAXIAL LAYERS ON (001) GAAS SUBSTRATES [J].

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NIJMAN, W .

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[4] LPE HIGHLY PERFECT INGAASP INP STRUCTURE CHARACTERIZATION BY X-RAY DOUBLE CRYSTAL DIFFRACTOMETRY [J].

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FORNUTO, G ;

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TAIARIOL, F .

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[5] MISFIT STRESS IN INGAAS/INP HETEROEPITAXIAL STRUCTURES GROWN BY VAPOR-PHASE EPITAXY [J].

CHU, SNG ;

MACRANDER, AT ;

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JOHNSTON, WD .

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[6]

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[7]

FORNUTO G, 1986, MATER CHEM PHYS, V16, P45

[8] MISFIT DISLOCATIONS IN INGAAS/INP MBE SINGLE HETEROSTRUCTURES [J].

FRANZOSI, P ;

SALVIATI, G ;

GENOVA, F ;

STANO, A ;

TAIARIOL, F .

JOURNAL OF CRYSTAL GROWTH, 1986, 75 (03) :521-534

[9] ON THE LOCATION OF THE MISFIT DISLOCATIONS IN INGAAS/INP MBE SINGLE HETEROSTRUCTURES [J].

FRANZOSI, P ;

SALVIATI, G ;

GENOVA, F ;

STANO, A ;

TAIARIOL, F .

MATERIALS LETTERS, 1985, 3 (11) :425-428

[10] GROWTH OF IN.53GA.47AS LAYERS ON INP SUBSTRATES FOR IR DETECTORS BY MBE [J].

GENOVA, F ;

RIGO, C ;

STANO, A .

MATERIALS CHEMISTRY AND PHYSICS, 1984, 11 (02) :135-144

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