A SIMPLE PHYSICAL MODEL INCLUDING VELOCITY OVERSHOOT FOR N-CHANNEL HETEROSTRUCTURE FETS

被引：4

作者：

FULKERSON, DE

机构：

[1] Honeywell Systems and Research Center, Bloomington, MN, 55420

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1992年 / 39卷 / 09期

关键词：

D O I：

10.1109/16.155898

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A one-dimensional dc model is constructed for n-channel heterostructure FET's. The model includes the velocity versus field relationships, carrier diffusion, and velocity overshoot. The model and experimental data imply that the drain current increases by about 27% by velocity overshoot when the gate length is 1-mu-m.

引用

页码：2186 / 2188

页数：3

共 14 条

[1] AN ANALYTIC THEORY OF THE IMPACT OF VELOCITY OVERSHOOT ON THE DRAIN CHARACTERISTICS OF FIELD-EFFECT TRANSISTORS [J].

BLAKEY, PA ;

JOARDAR, K .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1992, 39 (03) :740-742

[2] MODEL FOR MODULATION DOPED FIELD-EFFECT TRANSISTOR [J].

DRUMMOND, TJ ;

MORKOC, H ;

LEE, K ;

SHUR, M .

ELECTRON DEVICE LETTERS, 1982, 3 (11) :338-341

[3] SIMULATION OF SUBMICROMETER GAAS-MESFETS USING A FULL DYNAMIC TRANSPORT MODEL [J].

FENG, YK ;

HINTZ, A .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1988, 35 (09) :1419-1431

[4] DETERMINATION OF EQUIVALENT NETWORK PARAMETERS OF SHORT-GATE-LENGTH MODULATION-DOPED FIELD-EFFECT TRANSISTORS [J].

FU, ST ;

LIU, SMJ ;

DAS, MB .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1990, 37 (04) :888-901

[5]

Grider D. E., 1990, 12th Annual GaAs IC Symposium. Technical Digest 1990 (Cat. No.90CH2889-4), P143, DOI 10.1109/GAAS.1990.175471

[6] ELECTRON VELOCITY SATURATION IN HETEROSTRUCTURE FIELD-EFFECT TRANSISTORS [J].

HAN, CJ ;

RUDEN, PP ;

NOHAVA, TE ;

NARUM, DH ;

GRIDER, DE ;

NEWSTROM, K ;

JOSLYN, P ;

SHUR, MS .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1990, 37 (03) :530-535

[7] MULTIDIMENSIONAL AUGMENTED CURRENT EQUATION INCLUDING VELOCITY OVERSHOOT [J].

KAN, EC ;

RAVAIOLI, U ;

CHEN, D .

IEEE ELECTRON DEVICE LETTERS, 1991, 12 (08) :419-421

[8] SIMULATION OF A GAAS-MESFET INCLUDING VELOCITY OVERSHOOT - AN EXTENDED DRIFT-DIFFUSION FORMALISM [J].

KIZILYALLI, IC ;

ARTAKI, M .

IEEE ELECTRON DEVICE LETTERS, 1989, 10 (09) :405-408

[9] SIMPLIFIED DEVICE EQUATIONS AND TRANSPORT-COEFFICIENTS FOR GAAS DEVICE MODELING [J].

KIZILYALLI, IC ;

HESS, K .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1987, 34 (11) :2352-2354

[10] ANALYTICAL MODEL FOR IV CHARACTERISTICS OF ION-IMPLANTED MESFETS WITH HEAVILY DOPED CHANNEL [J].

MOHAMMAD, SN ;

PATIL, MB ;

CHYI, JI ;

GAO, GB ;

MORKOC, H .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1990, 37 (01) :11-20

← 1 2 →