SIMULATION OF A GAAS-MESFET INCLUDING VELOCITY OVERSHOOT - AN EXTENDED DRIFT-DIFFUSION FORMALISM

被引：13

作者：

KIZILYALLI, IC

ARTAKI, M

机构：

来源：

IEEE ELECTRON DEVICE LETTERS | 1989年 / 10卷 / 09期

关键词：

D O I：

10.1109/55.34724

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：405 / 408

页数：4

共 18 条

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