学术探索
学术期刊
新闻热点
数据分析
智能评审
立即登录
DYNAMIC INTERFACIAL PROCESSES AT THE AMORPHOUS-SILICON AQUEOUS-ELECTROLYTE BOUNDARY
被引:7
作者
:
STUMPER, J
论文数:
0
引用数:
0
h-index:
0
STUMPER, J
LEWERENZ, HJ
论文数:
0
引用数:
0
h-index:
0
LEWERENZ, HJ
机构
:
来源
:
JOURNAL OF ELECTROANALYTICAL CHEMISTRY
|
1989年
/ 274卷
/ 1-2期
关键词
:
D O I
:
10.1016/0022-0728(89)87027-5
中图分类号
:
O65 [分析化学];
学科分类号
:
070302 ;
081704 ;
摘要
:
引用
收藏
页码:11 / 33
页数:23
相关论文
共 49 条
[41]
INSITU CHARACTERIZATION OF THE ILLUMINATED SILICON-ELECTROLYTE INTERFACE BY FOURIER-TRANSFORM INFRARED-SPECTROSCOPY
[J].
PETER, LM
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV UTAH,DEPT CHEM,SALT LAKE CITY,UT 84112
UNIV UTAH,DEPT CHEM,SALT LAKE CITY,UT 84112
PETER, LM
;
论文数:
引用数:
h-index:
机构:
BLACKWOOD, DJ
;
PONS, S
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV UTAH,DEPT CHEM,SALT LAKE CITY,UT 84112
UNIV UTAH,DEPT CHEM,SALT LAKE CITY,UT 84112
PONS, S
.
PHYSICAL REVIEW LETTERS,
1989,
62
(03)
:308
-311
[42]
A PARTIALLY STABILIZED PHOTOELECTROCHEMICAL CELL USING HYDROGENATED AMORPHOUS-SILICON PHOTO-ANODES COATED WITH THIN-FILMS OF POLYPYRROLE
[J].
SKOTHEIM, T
论文数:
0
引用数:
0
h-index:
0
机构:
LINKOPING INST TECHNOL,APPL PHYS LAB,S-58183 LINKOPING,SWEDEN
LINKOPING INST TECHNOL,APPL PHYS LAB,S-58183 LINKOPING,SWEDEN
SKOTHEIM, T
;
LUNDSTROM, I
论文数:
0
引用数:
0
h-index:
0
机构:
LINKOPING INST TECHNOL,APPL PHYS LAB,S-58183 LINKOPING,SWEDEN
LINKOPING INST TECHNOL,APPL PHYS LAB,S-58183 LINKOPING,SWEDEN
LUNDSTROM, I
;
DELAHOY, AE
论文数:
0
引用数:
0
h-index:
0
机构:
LINKOPING INST TECHNOL,APPL PHYS LAB,S-58183 LINKOPING,SWEDEN
LINKOPING INST TECHNOL,APPL PHYS LAB,S-58183 LINKOPING,SWEDEN
DELAHOY, AE
;
KAMPAS, FJ
论文数:
0
引用数:
0
h-index:
0
机构:
LINKOPING INST TECHNOL,APPL PHYS LAB,S-58183 LINKOPING,SWEDEN
LINKOPING INST TECHNOL,APPL PHYS LAB,S-58183 LINKOPING,SWEDEN
KAMPAS, FJ
;
VANIER, PE
论文数:
0
引用数:
0
h-index:
0
机构:
LINKOPING INST TECHNOL,APPL PHYS LAB,S-58183 LINKOPING,SWEDEN
LINKOPING INST TECHNOL,APPL PHYS LAB,S-58183 LINKOPING,SWEDEN
VANIER, PE
.
APPLIED PHYSICS LETTERS,
1982,
40
(03)
:281
-283
[43]
OPTICALLY INDUCED CONDUCTIVITY CHANGES IN DISCHARGE-PRODUCED HYDROGENATED AMORPHOUS-SILICON
[J].
STAEBLER, DL
论文数:
0
引用数:
0
h-index:
0
STAEBLER, DL
;
WRONSKI, CR
论文数:
0
引用数:
0
h-index:
0
WRONSKI, CR
.
JOURNAL OF APPLIED PHYSICS,
1980,
51
(06)
:3262
-3268
[44]
PHOTOCURRENT DOUBLING AT SI(111) - ANALYSIS OF THE SURFACE CONDITION
[J].
STUMPER, J
论文数:
0
引用数:
0
h-index:
0
STUMPER, J
;
LEWERENZ, HJ
论文数:
0
引用数:
0
h-index:
0
LEWERENZ, HJ
;
PETTENKOFER, C
论文数:
0
引用数:
0
h-index:
0
PETTENKOFER, C
.
ELECTROCHIMICA ACTA,
1989,
34
(09)
:1379
-1380
[45]
STUMPER J, IN PRESS PHYS REV B
[46]
SURFACE-CHEMISTRY OF HF PASSIVATED SILICON - X-RAY PHOTOELECTRON AND ION-SCATTERING SPECTROSCOPY RESULTS
[J].
WEINBERGER, BR
论文数:
0
引用数:
0
h-index:
0
WEINBERGER, BR
;
PETERSON, GG
论文数:
0
引用数:
0
h-index:
0
PETERSON, GG
;
ESCHRICH, TC
论文数:
0
引用数:
0
h-index:
0
ESCHRICH, TC
;
KRASINSKI, HA
论文数:
0
引用数:
0
h-index:
0
KRASINSKI, HA
.
JOURNAL OF APPLIED PHYSICS,
1986,
60
(09)
:3232
-3234
[47]
SCHOTTKY BARRIERS AT THE INTERFACE BETWEEN AMORPHOUS SILICON AND ELECTROLYTES
[J].
WILLIAMS, R
论文数:
0
引用数:
0
h-index:
0
机构:
RCA Laboratories, Princeton
WILLIAMS, R
.
JOURNAL OF APPLIED PHYSICS,
1979,
50
(04)
:2848
-2851
[48]
UNUSUALLY LOW SURFACE-RECOMBINATION VELOCITY ON SILICON AND GERMANIUM SURFACES
[J].
YABLONOVITCH, E
论文数:
0
引用数:
0
h-index:
0
YABLONOVITCH, E
;
ALLARA, DL
论文数:
0
引用数:
0
h-index:
0
ALLARA, DL
;
CHANG, CC
论文数:
0
引用数:
0
h-index:
0
CHANG, CC
;
GMITTER, T
论文数:
0
引用数:
0
h-index:
0
GMITTER, T
;
BRIGHT, TB
论文数:
0
引用数:
0
h-index:
0
BRIGHT, TB
.
PHYSICAL REVIEW LETTERS,
1986,
57
(02)
:249
-252
[49]
1985, INSTRUMENTAL METHODS, P302
←
1
2
3
4
5
→
共 49 条
[41]
INSITU CHARACTERIZATION OF THE ILLUMINATED SILICON-ELECTROLYTE INTERFACE BY FOURIER-TRANSFORM INFRARED-SPECTROSCOPY
[J].
PETER, LM
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV UTAH,DEPT CHEM,SALT LAKE CITY,UT 84112
UNIV UTAH,DEPT CHEM,SALT LAKE CITY,UT 84112
PETER, LM
;
论文数:
引用数:
h-index:
机构:
BLACKWOOD, DJ
;
PONS, S
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV UTAH,DEPT CHEM,SALT LAKE CITY,UT 84112
UNIV UTAH,DEPT CHEM,SALT LAKE CITY,UT 84112
PONS, S
.
PHYSICAL REVIEW LETTERS,
1989,
62
(03)
:308
-311
[42]
A PARTIALLY STABILIZED PHOTOELECTROCHEMICAL CELL USING HYDROGENATED AMORPHOUS-SILICON PHOTO-ANODES COATED WITH THIN-FILMS OF POLYPYRROLE
[J].
SKOTHEIM, T
论文数:
0
引用数:
0
h-index:
0
机构:
LINKOPING INST TECHNOL,APPL PHYS LAB,S-58183 LINKOPING,SWEDEN
LINKOPING INST TECHNOL,APPL PHYS LAB,S-58183 LINKOPING,SWEDEN
SKOTHEIM, T
;
LUNDSTROM, I
论文数:
0
引用数:
0
h-index:
0
机构:
LINKOPING INST TECHNOL,APPL PHYS LAB,S-58183 LINKOPING,SWEDEN
LINKOPING INST TECHNOL,APPL PHYS LAB,S-58183 LINKOPING,SWEDEN
LUNDSTROM, I
;
DELAHOY, AE
论文数:
0
引用数:
0
h-index:
0
机构:
LINKOPING INST TECHNOL,APPL PHYS LAB,S-58183 LINKOPING,SWEDEN
LINKOPING INST TECHNOL,APPL PHYS LAB,S-58183 LINKOPING,SWEDEN
DELAHOY, AE
;
KAMPAS, FJ
论文数:
0
引用数:
0
h-index:
0
机构:
LINKOPING INST TECHNOL,APPL PHYS LAB,S-58183 LINKOPING,SWEDEN
LINKOPING INST TECHNOL,APPL PHYS LAB,S-58183 LINKOPING,SWEDEN
KAMPAS, FJ
;
VANIER, PE
论文数:
0
引用数:
0
h-index:
0
机构:
LINKOPING INST TECHNOL,APPL PHYS LAB,S-58183 LINKOPING,SWEDEN
LINKOPING INST TECHNOL,APPL PHYS LAB,S-58183 LINKOPING,SWEDEN
VANIER, PE
.
APPLIED PHYSICS LETTERS,
1982,
40
(03)
:281
-283
[43]
OPTICALLY INDUCED CONDUCTIVITY CHANGES IN DISCHARGE-PRODUCED HYDROGENATED AMORPHOUS-SILICON
[J].
STAEBLER, DL
论文数:
0
引用数:
0
h-index:
0
STAEBLER, DL
;
WRONSKI, CR
论文数:
0
引用数:
0
h-index:
0
WRONSKI, CR
.
JOURNAL OF APPLIED PHYSICS,
1980,
51
(06)
:3262
-3268
[44]
PHOTOCURRENT DOUBLING AT SI(111) - ANALYSIS OF THE SURFACE CONDITION
[J].
STUMPER, J
论文数:
0
引用数:
0
h-index:
0
STUMPER, J
;
LEWERENZ, HJ
论文数:
0
引用数:
0
h-index:
0
LEWERENZ, HJ
;
PETTENKOFER, C
论文数:
0
引用数:
0
h-index:
0
PETTENKOFER, C
.
ELECTROCHIMICA ACTA,
1989,
34
(09)
:1379
-1380
[45]
STUMPER J, IN PRESS PHYS REV B
[46]
SURFACE-CHEMISTRY OF HF PASSIVATED SILICON - X-RAY PHOTOELECTRON AND ION-SCATTERING SPECTROSCOPY RESULTS
[J].
WEINBERGER, BR
论文数:
0
引用数:
0
h-index:
0
WEINBERGER, BR
;
PETERSON, GG
论文数:
0
引用数:
0
h-index:
0
PETERSON, GG
;
ESCHRICH, TC
论文数:
0
引用数:
0
h-index:
0
ESCHRICH, TC
;
KRASINSKI, HA
论文数:
0
引用数:
0
h-index:
0
KRASINSKI, HA
.
JOURNAL OF APPLIED PHYSICS,
1986,
60
(09)
:3232
-3234
[47]
SCHOTTKY BARRIERS AT THE INTERFACE BETWEEN AMORPHOUS SILICON AND ELECTROLYTES
[J].
WILLIAMS, R
论文数:
0
引用数:
0
h-index:
0
机构:
RCA Laboratories, Princeton
WILLIAMS, R
.
JOURNAL OF APPLIED PHYSICS,
1979,
50
(04)
:2848
-2851
[48]
UNUSUALLY LOW SURFACE-RECOMBINATION VELOCITY ON SILICON AND GERMANIUM SURFACES
[J].
YABLONOVITCH, E
论文数:
0
引用数:
0
h-index:
0
YABLONOVITCH, E
;
ALLARA, DL
论文数:
0
引用数:
0
h-index:
0
ALLARA, DL
;
CHANG, CC
论文数:
0
引用数:
0
h-index:
0
CHANG, CC
;
GMITTER, T
论文数:
0
引用数:
0
h-index:
0
GMITTER, T
;
BRIGHT, TB
论文数:
0
引用数:
0
h-index:
0
BRIGHT, TB
.
PHYSICAL REVIEW LETTERS,
1986,
57
(02)
:249
-252
[49]
1985, INSTRUMENTAL METHODS, P302
←
1
2
3
4
5
→