UNIAXIAL STRESS MEASUREMENTS ON N-TYPE GAAS

被引：4

作者：

AHMAD, CN

ADAMS, AR

机构：

来源：

SOLID STATE COMMUNICATIONS | 1978年 / 27卷 / 03期

关键词：

D O I：

10.1016/0038-1098(78)90022-4

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：219 / 222

页数：4

共 10 条

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ADAMS, AR ;

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PICKERING, C ;

PITT, GD ;

FAWCETT, W .

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[2] PIEZORESISTANCE AND CONDUCTION-BAND MINIMA OF GAAS [J].

ASPNES, DE ;

CARDONA, M .

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[3] GAAS LOWER CONDUCTION-BAND MINIMA - ORDERING AND PROPERTIES [J].

ASPNES, DE .

PHYSICAL REVIEW B, 1976, 14 (12) :5331-5343

[4] CALCULATED ELASTIC-CONSTANTS FOR STRESS PROBLEMS ASSOCIATED WITH SEMICONDUCTOR DEVICES [J].

BRANTLEY, WA .

JOURNAL OF APPLIED PHYSICS, 1973, 44 (01) :534-535

[5] Electrical properties of the GaAs X-1C minima at low electric fields from a high-pressure experiment [J].

Fitt, G. D. ;

Lees, J. .

PHYSICAL REVIEW B-SOLID STATE, 1970, 2 (10) :4144-4160

[6] EFFECTS OF UNIAXIAL STRESS ON ELECTRICAL RESISTIVITY AND GUNN EFFECT IN N-TYPE GAAS [J].

HARRIS, JS ;

MOLL, JL ;

PEARSON, GL .

PHYSICAL REVIEW B, 1970, 1 (04) :1660-&

[7] UNIAXIAL STRESS INVESTIGATIONS OF 3-LEVEL CONDUCTION-BAND STRUCTURE OF GAAS [J].

PICKERING, C ;

ADAMS, AR .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1977, 10 (16) :3115-3126

[8]

PIKUS GE, 1960, SOV PHYS-SOL STATE, V1, P1502

[9] PIEZO-ELECTROREFLECTANCE IN GE GAAS AND SI [J].

POLLAK, FH ;

CARDONA, M .

PHYSICAL REVIEW, 1968, 172 (03) :816-&

[10]

VINSON PJ, 1976, 13TH P INT C PHYS SE, P1243

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