UNIAXIAL STRESS INVESTIGATIONS OF 3-LEVEL CONDUCTION-BAND STRUCTURE OF GAAS

被引：26

作者：

PICKERING, C ^{[1
]}

ADAMS, AR ^{[1
]}

机构：

[1] UNIV SURREY, DEPT PHYS, GUILDFORD GU2 5XH, SURREY, ENGLAND

来源：

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS | 1977年 / 10卷 / 16期

关键词：

D O I：

10.1088/0022-3719/10/16/020

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：3115 / 3126

页数：12

共 28 条

[1] 3-LEVEL CONDUCTION-BAND STRUCTURE OF GAAS FROM HIGH-STRESS AND HIGH-FIELD MEASUREMENTS
ADAMS, AR
VINSON, PJ
PICKERING, C
PITT, GD
FAWCETT, W
[J]. ELECTRONICS LETTERS, 1977, 13 (02) : 46 - 48
[2] GAAS LOWER CONDUCTION-BAND MINIMA - ORDERING AND PROPERTIES
ASPNES, DE
[J]. PHYSICAL REVIEW B, 1976, 14 (12) : 5331 - 5343
[3] ORDERING AND ABSOLUTE ENERGIES OF L6C AND X6C CONDUCTION-BAND MINIMA IN GAAS
ASPNES, DE
OLSON, CG
LYNCH, DW
[J]. PHYSICAL REVIEW LETTERS, 1976, 37 (12) : 766 - 769
[4] PIEZORESISTANCE AND PIEZO-HALL-EFFECT IN N-TYPE SILICON
AUBREY, JE
GUBLER, W
HENNINGSEN, T
KOENIG, SH
[J]. PHYSICAL REVIEW, 1963, 130 (05): : 1667 - +
[5] TEMPERATURE-DEPENDENCE OF BAND-STRUCTURE OF GERMANIUM-TYPE AND ZINCBLENDE-TYPE SEMICONDUCTORS
AUVERGNE, D
CAMASSEL, J
MATHIEU, H
CARDONA, M
[J]. PHYSICAL REVIEW B, 1974, 9 (12): : 5168 - 5177
[6] CALCULATED ELASTIC-CONSTANTS FOR STRESS PROBLEMS ASSOCIATED WITH SEMICONDUCTOR DEVICES
BRANTLEY, WA
[J]. JOURNAL OF APPLIED PHYSICS, 1973, 44 (01) : 534 - 535
[7] EFFECT OF PRESSURE ON BAND EXTREMA OF COVALENT SEMICONDUCTORS
COSTATO, M
REGGIANI, L
[J]. LETTERE AL NUOVO CIMENTO, 1970, 4 (18): : 848 - &
[8] Electrical properties of the GaAs X-1C minima at low electric fields from a high-pressure experiment
Fitt, G. D.
Lees, J.
[J]. PHYSICAL REVIEW B-SOLID STATE, 1970, 2 (10): : 4144 - 4160
[9] MICROWAVE OSCILLATIONS OF CURRENT IN III-V SEMICONDUCTORS
GUNN, JB
[J]. SOLID STATE COMMUNICATIONS, 1963, 1 (04) : 88 - 91
[10] EFFECTS OF UNIAXIAL STRESS ON ELECTRICAL RESISTIVITY AND GUNN EFFECT IN N-TYPE GAAS
HARRIS, JS
MOLL, JL
PEARSON, GL
[J]. PHYSICAL REVIEW B, 1970, 1 (04): : 1660 - &

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