THEORETICAL STUDIES OF ELECTRONIC-STRUCTURE OF SEMICONDUCTOR SURFACES

[31] SURFACE-STATE TRANSITIONS OF SILICON IN ELECTRON ENERGY-LOSS SPECTRA [J]. PHYSICAL REVIEW LETTERS, 1973, 31 (02) : 102 - 105

[32] ROWE JE, 1974, PHYS REV LETT, V33, P1335

[33] INTERPLAY OF MONOHYDRIDE PHASE AND A NEWLY DISCOVERED DIHYDRIDE PHASE IN CHEMISORPTION OF H ON SI(100)2X1 [J]. PHYSICAL REVIEW B, 1976, 14 (04): : 1593 - 1596

[34] STRUCTURE AND ADSORPTION CHARACTERISTICS OF CLEAN SURFACES OF GERMANIUM AND SILICON [J]. JOURNAL OF CHEMICAL PHYSICS, 1959, 30 (04) : 917 - 926

[35] SELF-CONSISTENT PSEUDOPOTENTIAL CALCULATIONS ON SI(111) UNRECONSTRUCTED AND (2X1) RECONSTRUCTED SURFACES [J]. PHYSICAL REVIEW LETTERS, 1975, 34 (22) : 1385 - 1388

[36] LOW-ENERGY ELECTRON-DIFFRACTION DETERMINATION OF ATOMIC ARRANGEMENT ON IMPURITY-STABILIZED UNRECONSTRUCTED SI(111) SURFACES [J]. PHYSICAL REVIEW LETTERS, 1976, 37 (24) : 1622 - 1625

[37] On the surface states associated with a periodic potential [J]. PHYSICAL REVIEW, 1939, 56 (04): : 317 - 323

[38] OBSERVATION OF A BAND OF SILICON SURFACE STATES CONTAINING ONE ELECTRON PER SURFACE ATOM [J]. PHYSICAL REVIEW LETTERS, 1972, 28 (21) : 1381 - &

[31] SURFACE-STATE TRANSITIONS OF SILICON IN ELECTRON ENERGY-LOSS SPECTRA [J]. PHYSICAL REVIEW LETTERS, 1973, 31 (02) : 102 - 105

[32] ROWE JE, 1974, PHYS REV LETT, V33, P1335

[33] INTERPLAY OF MONOHYDRIDE PHASE AND A NEWLY DISCOVERED DIHYDRIDE PHASE IN CHEMISORPTION OF H ON SI(100)2X1 [J]. PHYSICAL REVIEW B, 1976, 14 (04): : 1593 - 1596

[34] STRUCTURE AND ADSORPTION CHARACTERISTICS OF CLEAN SURFACES OF GERMANIUM AND SILICON [J]. JOURNAL OF CHEMICAL PHYSICS, 1959, 30 (04) : 917 - 926

[35] SELF-CONSISTENT PSEUDOPOTENTIAL CALCULATIONS ON SI(111) UNRECONSTRUCTED AND (2X1) RECONSTRUCTED SURFACES [J]. PHYSICAL REVIEW LETTERS, 1975, 34 (22) : 1385 - 1388

[36] LOW-ENERGY ELECTRON-DIFFRACTION DETERMINATION OF ATOMIC ARRANGEMENT ON IMPURITY-STABILIZED UNRECONSTRUCTED SI(111) SURFACES [J]. PHYSICAL REVIEW LETTERS, 1976, 37 (24) : 1622 - 1625

[37] On the surface states associated with a periodic potential [J]. PHYSICAL REVIEW, 1939, 56 (04): : 317 - 323

[38] OBSERVATION OF A BAND OF SILICON SURFACE STATES CONTAINING ONE ELECTRON PER SURFACE ATOM [J]. PHYSICAL REVIEW LETTERS, 1972, 28 (21) : 1381 - &