SURFACE-ANALYSIS OF REACTIVE ION-ETCHED INP

被引：20

作者：

VANROIJEN, R

KEMP, MBM

BULLELIEUWMA, CWT

VANIJZENDOORN, LJ

THIJSSEN, TLG

机构：

[1] Philips Research Laboratory, 5600 JA Eindhoven

来源：

JOURNAL OF APPLIED PHYSICS | 1991年 / 70卷 / 07期

关键词：

D O I：

10.1063/1.349165

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A dry-etch process for InP is developed using a mixture of Cl2, Ar, CH4, and H2. This process results in a high etch rate and good anisotropy. The induced damage is investigated by surface characterization after etching, using x-ray photoelectron spectroscopy, Rutherford backscattering spectrometry, photoluminescence measurements, and transmission electron microscopy. The etch mechanism is briefly discussed.

引用

页码：3983 / 3985

页数：3

共 17 条

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