PHOTOLUMINESCENT CHARACTERIZATION OF MBE-GROWN REACTIVE ION-ETCHED GAAS

被引：3

作者：

HEATH, LS ^{[1
]}

SMITH, DD ^{[1
]}

DUTTA, M ^{[1
]}

TAYSINGLARA, MA ^{[1
]}

MONAHAN, TP ^{[1
]}

机构：

[1] USA,ELECTR TECHNOL & DEVICES LAB,FT MONMOUTH,NJ 07703

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1989年 / 136卷 / 02期

关键词：

D O I：

10.1149/1.2096661

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：495 / 497

页数：3

共 12 条

[1] RADIATION-DAMAGE OF GALLIUM-ARSENIDE INDUCED BY REACTIVE ION ETCHING
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[2] LATERAL (TWO-DIMENSIONAL) SUPER-LATTICES - QUANTUM-WELL CONFINEMENT AND CHARGE INSTABILITIES
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[3] THE ORIGIN OF A HIGHLY RESISTIVE LAYER AT A GROWTH-INTERRUPTED INTERFACE OF GAAS GROWN BY MOLECULAR-BEAM EPITAXY
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[J]. JOURNAL OF APPLIED PHYSICS, 1987, 61 (05) : 2095 - 2097
[4] AMBIENT-INDUCED SURFACE EFFECTS ON INP AND GAAS
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[J]. JOURNAL OF APPLIED PHYSICS, 1986, 60 (12) : 4209 - 4214
[5] PHYSICS AND APPLICATIONS OF QUANTUM-WELLS IN OPTICS
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[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1987, 5 (01): : 313 - 313
[6] COMPARISON OF THE DAMAGE AND CONTAMINATION PRODUCED BY CF4 AND CF4/H2 REACTIVE ION ETCHING - THE ROLE OF HYDROGEN
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[J]. APPLIED PHYSICS LETTERS, 1986, 48 (17) : 1147 - 1149
[7] UNPINNED (100) GAAS-SURFACES IN AIR USING PHOTOCHEMISTRY
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PETTIT, GD
[J]. APPLIED PHYSICS LETTERS, 1986, 48 (07) : 475 - 477
[8] OPTOELECTRONIC AND STRUCTURAL-PROPERTIES OF SPUTTER ETCHED SURFACES OF INP
OLEGO, DJ
SCHACHTER, R
VISCOGLIOSI, M
BUNZ, LA
[J]. APPLIED PHYSICS LETTERS, 1986, 49 (12) : 719 - 721
[9] SURFACE DAMAGE ON GAAS INDUCED BY REACTIVE ION ETCHING AND SPUTTER ETCHING
PANG, SW
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1986, 133 (04) : 784 - 787
[10] EFFECTS OF DRY ETCHING ON GAAS
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GEIS, MW
PIACENTINI, WJ
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (04): : 1334 - 1337

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