THE EFFECT OF OXYGEN ON FILM DEPOSITION OF A-SI-H BY TETRODE RF SPUTTERING

被引：3

作者：

GEKKA, Y ^{[1
]}

AKIMOTO, M ^{[1
]}

KITA, T ^{[1
]}

OHTANI, Y ^{[1
]}

KEZUKA, H ^{[1
]}

机构：

[1] TOKYO ENGN UNIV,FAC ENGN,DEPT ELECTR,HACHIOJI,TOKYO 192,JAPAN

来源：

APPLIED SURFACE SCIENCE | 1988年 / 33-4卷

关键词：

D O I：

10.1016/0169-4332(88)90373-X

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

页码：728 / 734

页数：7

共 13 条

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