EFFECT OF OXYGEN CONTAMINATION ON THE DEPOSITION OF HYDROGENATED AMORPHOUS-SILICON FILMS BY TETRODE RADIOFREQUENCY SPUTTERING

被引：8

作者：

GEKKA, Y

FUKUDA, T

YASUMURA, Y

KEZUKA, H

AKIMOTO, M

机构：

[1] TOKYO ENGN UNIV,DEPT ELECTR,HACHIOJI,TOKYO 192,JAPAN

[2] KANTO GAKUIN UNIV,COLL ENGN,YOKOHAMA 236,JAPAN

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1987年 / 5卷 / 04期

关键词：

D O I：

10.1116/1.574496

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：1786 / 1790

页数：5

共 12 条

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[6] OXYGEN-BONDING ENVIRONMENTS IN GLOW-DISCHARGE DEPOSITED AMORPHOUS SILICON-HYDROGEN ALLOY-FILMS [J].

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[7] A STRUCTURAL INTERPRETATION OF THE INFRARED-ABSORPTION SPECTRA OF A-SI-H-O ALLOYS [J].

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[9]

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[10]

PAUL W, 1985, TETRAHEDRALLY BONDED, P170

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