INFLUENCE OF ONHOMOGENEOUS DISTRIBUTION OF RECOMBINATION CENTERS ON INVERSION BEHAVIOR OF MOS CONDENSERS

被引：6

作者：

TUTTO, P ^{[1
]}

机构：

[1] HUNGARIAN ACAD SCI, RES INST TECH PHYS, BUDAPEST, HUNGARY

来源：

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 1974年 / 21卷 / 02期

关键词：

D O I：

10.1002/pssa.2210210235

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：693 / 702

页数：10

共 11 条

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