NEW APPROACH TO THE STRAIN RELAXATION MECHANISM IN LATTICE-MISMATCHED EPITAXY

被引：15

作者：

TATSUOKA, H

KUWABARA, H

NAKANISHI, Y

FUJIYASU, H

机构：

[1] SHIZUOKA UNIV,ELECTR RES INST,HAMAMATSU,SHIZUOKA 432,JAPAN

[2] SHIZUOKA UNIV,FAC ENGN,HAMAMATSU,SHIZUOKA 432,JAPAN

来源：

THIN SOLID FILMS | 1991年 / 201卷 / 01期

关键词：

D O I：

10.1016/0040-6090(91)90154-P

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A new approach is presented for the calculation of the dependence of elastic strain on the thickness of CdTe(100) films on GaAs(100) substrates. The present results are obtained by assuming that the misfit dislocation density is in proportion to the strain. It is found that our model fits experimental results quite well. The model suggests that abrupt relaxation occurs at the interface between the film and substrate. The misfit dislocation density is calculated as a function of distance from the interface. Applications of our model to InAs/GaAs(100) and GaAs/Si(100) systems are also discussed.

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收藏

页码：59 / 67

页数：9

相关论文

共 23 条

[1] THERMAL-EXPANSION MEASUREMENTS ON 4 OPTICAL MATERIALS FROM ROOM-TEMPERATURE TO 10 K [J].

BROWDER, JS ;

BALLARD, SS .

APPLIED OPTICS, 1972, 11 (04) :841-&

[2] RELAXATION OF STRAINED-LAYER SEMICONDUCTOR STRUCTURES VIA PLASTIC-FLOW [J].

DODSON, BW ;

TSAO, JY .

APPLIED PHYSICS LETTERS, 1987, 51 (17) :1325-1327

[3] CDTE-GAAS(100) INTERFACE - MBE GROWTH, RHEED AND XPS CHARACTERIZATION [J].

FAURIE, JP ;

HSU, C ;

SIVANANTHAN, S ;

CHU, X .

SURFACE SCIENCE, 1986, 168 (1-3) :473-482

[4] PRECISION THERMAL EXPANSION MEASUREMENTS OF SEMI-INSULATING GAAS [J].

FEDER, R ;

LIGHT, T .

JOURNAL OF APPLIED PHYSICS, 1968, 39 (10) :4870-&

[5] RELAXATION OF STRESSES IN CDTE LAYERS GROWN BY MOLECULAR-BEAM EPITAXY [J].

FONTAINE, C ;

GAILLIARD, JP ;

MAGLI, S ;

MILLION, A ;

PIAGUET, J .

APPLIED PHYSICS LETTERS, 1987, 50 (14) :903-905

[6] ROLE OF EXPERIMENTAL RESOLUTION IN MEASUREMENTS OF CRITICAL LAYER THICKNESS FOR STRAINED-LAYER EPITAXY [J].

FRITZ, IJ .

APPLIED PHYSICS LETTERS, 1987, 51 (14) :1080-1081

[7] RAMAN-STUDY OF AN EPITAXIAL GAAS LAYER ON A SI[100] SUBSTRATE [J].

HUANG, YH ;

YU, PY ;

CHARASSE, MN ;

LO, YH ;

WANG, S .

APPLIED PHYSICS LETTERS, 1987, 51 (03) :192-194

[8] NEW APPROACH TO THE HIGH-QUALITY EPITAXIAL-GROWTH OF LATTICE-MISMATCHED MATERIALS [J].

LURYI, S ;

SUHIR, E .

APPLIED PHYSICS LETTERS, 1986, 49 (03) :140-142

[9] GENERATION OF MISFIT DISLOCATIONS IN SEMICONDUCTORS [J].

MAREE, PMJ ;

BARBOUR, JC ;

VANDERVEEN, JF ;

KAVANAGH, KL ;

BULLELIEUWMA, CWT ;

VIEGERS, MPA .

JOURNAL OF APPLIED PHYSICS, 1987, 62 (11) :4413-4420

[10]

MATTHEWS JW, 1979, DISLOCATIONS SOLIDS