MONTE-CARLO STUDIES OF ELECTRONIC TRANSPORT IN COMPENSATED INP

被引：13

作者：

COSTA, J

PECZALSKI, A

SHUR, M

机构：

[1] HONEYWELL,CTR SYST & RES,MINNEAPOLIS,MN 55418

[2] UNIV MINNESOTA,DEPT ELECT ENGN,MINNEAPOLIS,MN 55455

来源：

JOURNAL OF APPLIED PHYSICS | 1989年 / 66卷 / 02期

关键词：

D O I：

10.1063/1.343536

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：674 / 679

页数：6

共 28 条

[1] TRANSIENT ELECTRONIC TRANSPORT IN INP UNDER THE CONDITION OF HIGH-ENERGY ELECTRON INJECTION
BRENNAN, K
HESS, K
TANG, JYF
IAFRATE, GJ
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1983, 30 (12) : 1750 - 1754
[2] COMPARISON OF THE SATURATED CURRENT IN NORMAL AND INVERTED MODULATION-DOPED IN0.53GA0.47AS/INP STRUCTURES
CHAN, WK
COX, HM
HUMMEL, SG
DAVISSON, PS
LEHENY, RF
[J]. IEEE ELECTRON DEVICE LETTERS, 1985, 6 (05) : 247 - 249
[3] GAIN OF A HETEROJUNCTION BIPOLAR PHOTOTRANSISTOR
CHAND, N
HOUSTON, PA
ROBSON, PN
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (03) : 622 - 627
[4] SELF-ALIGNED IN0.53GA0.47AS/SEMI-INSULATING/N+ INP JUNCTION FIELD-EFFECT TRANSISTORS
CHENG, J
STALL, R
FORREST, SR
LONG, J
CHENG, CL
GUTH, G
WUNDER, R
RIGGS, VG
[J]. IEEE ELECTRON DEVICE LETTERS, 1985, 6 (07) : 384 - 386
[5] DESIGN CRITERIA FOR GAAS-MESFETS RELATED TO STATIONARY HIGH-FIELD DOMAINS
EASTMAN, LF
TIWARI, S
SHUR, MS
[J]. SOLID-STATE ELECTRONICS, 1980, 23 (04) : 383 - 389
[6] MONTE-CARLO DETERMINATION OF ELECTRON TRANSPORT PROPERTIES IN GALLIUM ARSENIDE
FAWCETT, W
BOARDMAN, AD
SWAIN, S
[J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1970, 31 (09) : 1963 - &
[7] HASEGAWA H, 1985, IEEE T ELECTRON DEV, V32, P2252
[8] INP GROWTH AND PROPERTIES
HENRY, RL
SWIGGARD, EM
[J]. JOURNAL OF ELECTRONIC MATERIALS, 1978, 7 (05) : 647 - 657
[9] ELECTRONIC AND OPTICAL-PROPERTIES OF FE-DOPED INP PREPARED BY ORGANOMETALLIC VAPOR-PHASE EPITAXY
HUANG, K
WESSELS, BW
[J]. JOURNAL OF APPLIED PHYSICS, 1986, 60 (12) : 4342 - 4344
[10] ITOH Y, 1985, P IEEE INT ELECTRON, P475

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