INP/INGAAS RESONANT-CAVITY ENHANCED PHOTODETECTOR AND LIGHT-EMITTING DIODE WITH EXTERNAL MIRRORS ON SI

被引：12

作者：

SALVADOR, A ^{[1
]}

HUANG, F ^{[1
]}

SVERDLOV, B ^{[1
]}

BOTCHKAREV, AE ^{[1
]}

MORKOC, H ^{[1
]}

机构：

[1] UNIV ILLINOIS,COORDINATED SCI LAB,URBANA,IL 61801

来源：

ELECTRONICS LETTERS | 1994年 / 30卷 / 18期

关键词：

PHOTODETECTORS; OPTOELECTRONICS;

D O I：

10.1049/el:19941057

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Epitaxial lift-off (ELO) techniques were employed in the Fabrication of InP/InGaAs vertical surface light emitting diodes and resonant cavity enhanced photodetectors on Si. External mirrors were employed consisting of Si/SiO2 quarter wave dielectric stacks. The main peak in the emission spectrum of the fabricated device has an FWHM of 8nm. The spectral response of the photodetector shows wavelength selectivity, and with an InGaAs absorbing layer only 0.1 mu M thick a peak quantum efficiency of 0.48 was obtained in the 1.5 mu m spectral region.

引用

页码：1527 / 1529

页数：3

共 8 条

[1] NEAR ROOM-TEMPERATURE CONTINUOUS-WAVE LASING CHARACTERISTICS OF GAINASP/INP SURFACE-EMITTING LASER [J].