REDUCTION OF THE SURFACE RECOMBINATION CURRENT IN INGAAS/INP PSEUDO-HETEROJUNCTION BIPOLAR-TRANSISTORS USING A THIN INP PASSIVATION LAYER

被引：22

作者：

TOKUMITSU, E

DENTAI, AG

JOYNER, CH

机构：

来源：

IEEE ELECTRON DEVICE LETTERS | 1989年 / 10卷 / 12期

关键词：

D O I：

10.1109/55.43148

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：585 / 587

页数：3

共 14 条

[1]

CAREY KW, 1989, ABSTR EL MAT C, P10

[2] SURFACE PASSIVATION TECHNIQUES FOR INP AND INGAASP P-N-JUNCTION STRUCTURES [J].

DIADIUK, V ;

ARMIENTO, CA ;

GROVES, SH ;

HURWITZ, CE .

ELECTRON DEVICE LETTERS, 1980, 1 (09) :177-178

[3] A POSSIBLE NEAR-BALLISTIC COLLECTION IN AN ALGAAS GAAS HBT WITH A MODIFIED COLLECTOR STRUCTURE [J].

ISHIBASHI, T ;

YAMAUCHI, Y .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1988, 35 (04) :401-404

[4]

LEE W, 1986, IEEE ELECTR DEVICE L, V7, P683, DOI 10.1109/EDL.1986.26519

[5] EFFECT OF EMITTER-BASE SPACING ON THE CURRENT GAIN OF ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS [J].

LEE, WS ;

UEDA, D ;

MA, T ;

PAO, YC ;

HARRIS, JS .

IEEE ELECTRON DEVICE LETTERS, 1989, 10 (05) :200-202

[6] ALAS/GAAS TUNNEL EMITTER BIPOLAR-TRANSISTOR [J].

LEVI, AFJ ;

NOTTENBURG, RN ;

CHEN, YK ;

CUNNINGHAM, JE .

APPLIED PHYSICS LETTERS, 1989, 54 (22) :2250-2252

[7] SUPER-GAIN ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS USING AN EMITTER EDGE-THINNING DESIGN [J].

LIN, HH ;

LEE, SC .

APPLIED PHYSICS LETTERS, 1985, 47 (08) :839-841

[8] DC CHARACTERIZATION OF THE ALGAAS/GAAS TUNNELING EMITTER BIPOLAR-TRANSISTOR [J].

NAJJAR, FE ;

RADULESCU, DC ;

CHEN, YK ;

WICKS, GW ;

TASKER, PJ ;

EASTMAN, LF .

APPLIED PHYSICS LETTERS, 1987, 50 (26) :1915-1917

[9] INGAAS/INP DOUBLE-HETEROSTRUCTURE BIPOLAR-TRANSISTORS WITH NEAR-IDEAL BETA-VERSUS IC CHARACTERISTIC [J].

NOTTENBURG, RN ;

TEMKIN, H ;

PANISH, MB ;

BHAT, R ;

BISCHOFF, JC .

IEEE ELECTRON DEVICE LETTERS, 1986, 7 (11) :643-645

[10] HOT-ELECTRON INGAAS/INP HETEROSTRUCTURE BIPOLAR-TRANSISTORS WITH FT OF 110-GHZ [J].

NOTTENBURG, RN ;

CHEN, YK ;

PANISH, MB ;

HUMPHREY, DA ;

HAMM, R .

IEEE ELECTRON DEVICE LETTERS, 1989, 10 (01) :30-32

← 1 2 →