X-RAY, PHOTOLUMINESCENCE, STOICHIOMETRY, AND THICKNESS MAPPING OF IN1-XGAXASYP1-Y

Maps of InP/InGaAsP/InP double heterostructures grown by hydride vapor phase epitaxy and by metalorganic chemical vapor deposition on (001) InP substrates have been obtained. X-ray double-crystal rocking curves of the (004) reflection and photoluminescence spectra at room temperature were separately obtained at 65 locations on two in. diam wafers. The x-ray data were used to obtain maps of the lattice mismatch and of the thickness of the InGaAsP layer. The photoluminescence data were used to obtain maps of the bandgap, and these were combined with the mismatch data to yield maps of the Ga and As mole fractions. The thickness was found to closely correlate to both the Ga and As mole fractions for hydride vapor phase epitaxy but to weakly correlate to only the Ga mole fraction for metal-organic chemical vapor deposition.