X-RAY, PHOTOLUMINESCENCE, AND SIMS CHARACTERIZATION OF INGAAS/INP GROWN BY VAPOR-PHASE EPITAXY

被引：10

作者：

MACRANDER, AT

SWAMINATHAN, V

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1987年 / 134卷 / 05期

关键词：

D O I：

10.1149/1.2100651

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：1247 / 1253

页数：7

共 36 条

[1] HIGH-PURITY GAAS GROWN BY THE HYDRIDE VPE PROCESS [J].

ABROKWAH, JK ;

PECK, TN ;

WALTERSON, RA ;

STILLMAN, GE ;

LOW, TS ;

SKROMME, B .

JOURNAL OF ELECTRONIC MATERIALS, 1983, 12 (04) :681-699

[2] ENERGY BAND-GAP SHIFT WITH ELASTIC STRAIN IN GAXIN1-XP EPITAXIAL LAYERS ON (001) GAAS SUBSTRATES [J].

ASAI, H ;

OE, K .

JOURNAL OF APPLIED PHYSICS, 1983, 54 (04) :2052-2056

[3] CHARACTERIZATION OF THIN-LAYERS ON PERFECT CRYSTALS WITH A MULTIPURPOSE HIGH-RESOLUTION X-RAY DIFFRACTOMETER [J].

BARTELS, WJ .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (02) :338-345

[4] GROWTH AND PHOTO-LUMINESCENCE SPECTRA OF HIGH-PURITY LIQUID-PHASE EPITAXIAL IN0.53GA0.47AS [J].

BHATTACHARYA, PK ;

RAO, MV ;

TSAI, MJ .

JOURNAL OF APPLIED PHYSICS, 1983, 54 (09) :5096-5102

[5] NEAR-BAND-GAP ABSORPTION AND PHOTO-LUMINESCENCE OF IN0.53GA0.47AS SEMICONDUCTOR ALLOY [J].

CHEN, YS ;

KIM, OK .

JOURNAL OF APPLIED PHYSICS, 1981, 52 (12) :7392-7396

[6] EXTREMELY RAPID OUTDIFFUSION OF N-TYPE IMPURITIES IN INP [J].

CHIN, AK ;

CAMLIBEL, I ;

DUTT, BV ;

SWAMINATHAN, V ;

BONNER, WA ;

BALLMAN, AA .

APPLIED PHYSICS LETTERS, 1983, 42 (10) :901-903

[7] MISFIT STRESS IN INGAAS/INP HETEROEPITAXIAL STRUCTURES GROWN BY VAPOR-PHASE EPITAXY [J].

CHU, SNG ;

MACRANDER, AT ;

STREGE, KE ;

JOHNSTON, WD .

JOURNAL OF APPLIED PHYSICS, 1985, 57 (02) :249-257

[8] VAPOR LEVITATION EPITAXY - A NEW CONCEPT IN EPITAXIAL CRYSTAL-GROWTH [J].

COX, HM .

JOURNAL OF CRYSTAL GROWTH, 1984, 69 (2-3) :641-643

[9] VAPOR-PHASE EPITAXIAL-GROWTH OF HIGH-PURITY INGAAS, INP AND INGAAS/INP MULTILAYER STRUCTURES [J].

COX, HM ;

KOZA, MA ;

KERAMIDAS, VG ;

YOUNG, MS .

JOURNAL OF CRYSTAL GROWTH, 1985, 73 (03) :523-528

[10] HALL EFFECT AND RESISTIVITY OF ZN-DOPED GAAS [J].

ERMANIS, F ;

WOLFSTIR.K .

JOURNAL OF APPLIED PHYSICS, 1966, 37 (05) :1963-&

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