SINGLE-CRYSTALLINE SI METAL/OXIDE/SEMICONDUCTOR FIELD-EFFECT TRANSISTORS USING HIGH-QUALITY GATE SIO2 DEPOSITED AT 300-DEGREES-C BY REMOTE PLASMA TECHNIQUE

High-quality gate SiO2 for metal/oxide/semiconductor field-effect transistors (MOSFETs) could be deposited at as low as 300 degrees C in remote plasma chemical vapor deposition (CVD) utilizing activated neutral oxygen species and SiH4. The interface between deposited SiO2 and Si was improved with the formation of thin SiO2 by low-temperature oxidation using activated neutral oxygen species just before film deposition. The resistivity and breakdown field were as high as 10(16) Omega. cm and 10 MV/cm, respectively, equivalent to those of thermal SiO2 grown at high temperatures. The achieved minimum interface state density was as low as 4 x 10(10)cm(-2)eV(-1). Fabricated MOSFETs using single crystalline Si showed excellent performance, and an effective channel mobility of 135 cm(2) V(-1)s(-1) for holes was obtained.