HIGH-QUALITY DEPOSITED GATE OXIDE MOSFETS AND THE IMPORTANCE OF SURFACE PREPARATION

被引：25

作者：

STASIAK, J ^{[1
]}

BATEY, J ^{[1
]}

TIERNEY, E ^{[1
]}

LI, J ^{[1
]}

机构：

[1] YALE UNIV,DEPT ELECT ENGN,NEW HAVEN,CT 06529

来源：

IEEE ELECTRON DEVICE LETTERS | 1989年 / 10卷 / 06期

关键词：

D O I：

10.1109/55.31735

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：245 / 248

页数：4

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