CHARACTERIZATION OF A NEW REACTOR FOR REMOTE PLASMA CHEMICAL VAPOR-DEPOSITION

被引：4

作者：

HUELSMAN, AD ^{[1
]}

REIF, R ^{[1
]}

机构：

[1] MIT,DEPT ELECT ENGN & COMP SCI,CAMBRIDGE,MA 02139

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1989年 / 7卷 / 04期

关键词：

D O I：

10.1116/1.575796

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：2554 / 2561

页数：8

共 32 条

[1]

AYLWARD L, 1985, POLYM PROCESS ENG, V3, P247

[2] CHARACTERIZATION OF GAAS EPITAXIAL LAYERS GROWN IN A RADIATION HEATED MO-CVD REACTOR [J].

BENEKING, H ;

ESCOBOSA, A ;

KRAUTLE, H .

JOURNAL OF ELECTRONIC MATERIALS, 1981, 10 (03) :473-480

[3] MO-CVD GROWTH OF GAP AND GAA1P [J].

BENEKING, H ;

ROEHLE, H .

JOURNAL OF CRYSTAL GROWTH, 1981, 55 (01) :79-86

[4]

Bird R. B., 1960, TRANSPORT PHENOMENA

[5]

Brodsky M. H., 1980, IBM Technical Disclosure Bulletin, V22, P3391

[6] ON THE USE OF ASH3 IN THE MOLECULAR-BEAM EPITAXIAL-GROWTH OF GAAS [J].

CALAWA, AR .

APPLIED PHYSICS LETTERS, 1981, 38 (09) :701-703

[7] A MATHEMATICAL-MODEL OF THE COUPLED FLUID-MECHANICS AND CHEMICAL-KINETICS IN A CHEMICAL VAPOR-DEPOSITION REACTOR [J].

COLTRIN, ME ;

KEE, RJ ;

MILLER, JA .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1984, 131 (02) :425-434

[8] EFFECTS OF NATURAL AND FORCED CONVECTION IN VAPOR-PHASE GROWTH SYSTEMS [J].

CURTIS, BJ ;

DISMUKES, JP .

JOURNAL OF CRYSTAL GROWTH, 1972, 17 (DEC) :128-+

[9] HOMOGENEOUS AND HETEROGENEOUS THERMAL-DECOMPOSITION RATES OF TRIMETHYLGALLIUM AND ARSINE AND THEIR RELEVANCE TO THE GROWTH OF GAAS BY MOCVD [J].

DENBAARS, SP ;

MAA, BY ;

DAPKUS, PD ;

DANNER, AD ;

LEE, HC .

JOURNAL OF CRYSTAL GROWTH, 1986, 77 (1-3) :188-193

[10] LOW-TEMPERATURE SILICON EPITAXY USING LOW-PRESSURE CHEMICAL VAPOR-DEPOSITION WITH AND WITHOUT PLASMA ENHANCEMENT [J].

DONAHUE, TJ ;

BURGER, WR ;

REIF, R .

APPLIED PHYSICS LETTERS, 1984, 44 (03) :346-348

← 1 2 3 4 →