THE USE OF ORGANOMETALLIC GROUP-V SOURCES FOR THE METALORGANIC MOLECULAR-BEAM EPITAXY GROWTH OF IN0.48GA0.52P/GAAS AND IN0.53GA0.47AS/INP HETEROJUNCTION BIPOLAR DEVICE STRUCTURES

被引:10
作者
BEAM, EA
CHAU, HF
HENDERSON, TS
LIU, W
SEABAUGH, AC
机构
[1] Central Research Laboratories, Texas Instruments, Inc., Dallas, TX 75265, P.O. Box 655936
关键词
D O I
10.1016/0022-0248(94)90376-X
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
This paper describes the use of tertiarybutylarsine (TBA) and tertiarybutylphosphine (TBP) as replacements for arsine and phosphine in MOMBE/CBE for the production of device structures with state-of-the-art performance. The growth system used for this work is based on the use of elemental group-III and dopant sources, and employs thermal crackers for the low pressure precracking of TBA and TBP. Device structures fabricated in the In0.48Ga0.52P/GaAs materials system include single- and double-heterojunction bipolar transistors (SHBTs and DHBTs). Current gains as high as 2690 have been obtained with these transistors. Deep level transient spectroscopy (DLTS) measurements of the emitter-base junctions of these transistors reveals the absence of deep level traps, in contrast to similar devices fabricated using AlGaAs/GaAs. Device structures fabricated in the In0.53Ga0.47As/InP materials system include SHBTs, DHBTs, and resonant tunneling bipolar transistors (RTBTs). In0.53Ga0.47As/InP SHBTs with record maximum oscillation frequencies (f(max)) of > 180 GHz have been produced with high breakdown voltages BY(CEO) and BY(CBO) of 8.1 and 17 V, respectively. In addition, DHBTs with f(T) = 134 GHz and f(max) = 137 GHz have been fabricated. Resonant tunneling bipolar transistors, consisting of a structured AlAs/InxGa1-xAs resonant tunneling double barrier vertically integrated into the emitter of an InP/InGaAs double heterojunction bipolar transistor structure, have been demonstrated. These transistors have room temperature peak-to-valley current ratio of approximately 20, current gain of 100, and breakdown voltage exceeding 5 V, allowing the demonstration of the first room temperature resonant tunneling transistor integrated circuits.
引用
收藏
页码:1 / 10
页数:10
相关论文
共 27 条
[1]   SN DOPING OF GAAS AND ALGAAS GROWN BY METALORGANIC MOLECULAR-BEAM EPITAXY [J].
ABERNATHY, CR ;
PEARTON, SJ ;
HA, NT .
JOURNAL OF CRYSTAL GROWTH, 1991, 108 (3-4) :827-830
[2]   THE USE OF TERTIARYBUTYLPHOSPHINE AND TERTIARYBUTYLARSINE FOR THE METALORGANIC MOLECULAR-BEAM EPITAXY OF THE IN0.53GA0.47AS/INP AND IN0.48GA0.52P/GAAS MATERIALS SYSTEMS [J].
BEAM, EA ;
HENDERSON, TS ;
SEABAUGH, AC ;
YANG, JY .
JOURNAL OF CRYSTAL GROWTH, 1992, 116 (3-4) :436-446
[3]  
BEAM EA, 1991, MATER RES SOC S P, V20, P33
[4]   MULTIPLE NEGATIVE TRANSCONDUCTANCE AND DIFFERENTIAL CONDUCTANCE IN A BIPOLAR-TRANSISTOR BY SEQUENTIAL QUENCHING OF RESONANT TUNNELING [J].
CAPASSO, F ;
SEN, S ;
CHO, AY ;
SIVCO, DL .
APPLIED PHYSICS LETTERS, 1988, 53 (12) :1056-1058
[5]   HIGH-SPEED INP/INGAAS HETEROJUNCTION BIPOLAR-TRANSISTORS [J].
CHAU, HF ;
BEAM, EA .
IEEE ELECTRON DEVICE LETTERS, 1993, 14 (08) :388-390
[6]  
CHAU HF, 1993, 1993 DEV RES C SANT
[7]   INGAP/GAAS/INGAP DOUBLE HETEROSTRUCTURE BIPOLAR-TRANSISTORS WITH CARBON-DOPED BASE GROWN BY CBE [J].
CHEN, YK ;
RAPRE, R ;
TSANG, WT ;
WU, MC .
ELECTRONICS LETTERS, 1992, 28 (13) :1228-1230
[8]   RESONANT TUNNELING BIPOLAR-TRANSISTORS USING INALAS INGAAS HETEROSTRUCTURES [J].
FUTATSUGI, T ;
YAMAGUCHI, Y ;
MUTO, S ;
YOKOYAMA, N ;
SHIBATOMI, A .
JOURNAL OF APPLIED PHYSICS, 1989, 65 (04) :1771-1775
[9]  
HANSON AW, 1992, IEEE DEVICE RES C CA
[10]  
HENDERSON TM, UNPUB