ETCH CHARACTERISTICS OF SUCCINIC ACID AMMONIA HYDROGEN-PEROXIDE VERSUS ALUMINUM MOLE FRACTION IN ALGAAS

被引：12

作者：

MERRITT, SA ^{[1
]}

DAGENAIS, M ^{[1
]}

机构：

[1] JOINT PROGRAM ADV ELECTR MAT,COLL PK,MD 20742

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1993年 / 140卷 / 09期

关键词：

D O I：

10.1149/1.2220895

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

We have measured the etch rate and selectivity of succinic acid/ammonia/hydrogen peroxide etchants on AlxGa1-xAs with aluminum mole fractions of 0.1, 0.2, 0.4, and 0.6. The sensitivity to pH, peroxide concentration, and temperature was studied in a regime appropriate for fabricating GaAs/AlGaAs optoelectronic devices. The selectivity between Al0.2Ga0.8As and Al0.4Ga0.6As increases monotonically over the range of pH studied and is greater than 150 at pH 5.3. These results indicate aluminum mole fractions as low as 40% can be used for etch stop layers in GaAs/AlGaAs.

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页码：L138 / L139

页数：2

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