TRANSIENT GROWTH-RATE CHANGE DURING GAS-SOURCE MOLECULAR-BEAM EPITAXY OF SI1-XGEX ALLOYS

被引：5

作者：

OHTANI, N ^{[1
]}

MOKLER, SM ^{[1
]}

XIE, MH ^{[1
]}

ZHANG, J ^{[1
]}

JOYCE, BA ^{[1
]}

机构：

[1] NIPPON STEEL CORP LTD,SEMICOND BASIC TECHNOL RES LAB,NAKAHARA KU,KAWASAKI 211,JAPAN

来源：

APPLIED PHYSICS LETTERS | 1993年 / 62卷 / 17期

关键词：

D O I：

10.1063/1.109473

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Reflection high-energy electron diffraction intensity oscillations during gas source molecular beam epitaxy growth of Si1-xGex using disilane and germane are reported. Transient changes of the oscillation period and hence the growth rate are observed during the growth. Their origin is discussed on the basis of hydrogen desorption kinetics on the alloy surface and attributed to Ge surface segregation effects at the growth interface. This observation provides a unique opportunity for in situ investigations with monolayer-scale resolution, of Ge segregation effects in Si/Si1-xGex heterostructures.

引用

页码：2042 / 2044

页数：3

共 32 条

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