TRANSVERSE STRAGGLING OF MEV OXYGEN IONS IMPLANTED IN SILICON

被引：19

作者：

GROB, JJ

GROB, A

THEVENIN, P

SIFFERT, P

机构：

[1] CNRS, Strasbourg, Fr, CNRS, Strasbourg, Fr

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1988年 / 30卷 / 01期

关键词：

D O I：

10.1016/0168-583X(88)90075-4

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

SILICON AND ALLOYS

引用

页码：34 / 37

页数：4

共 18 条

[1]

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NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1987, 21 (2-4) :134-141

[4] BACKSCATTERING STUDY ON LATERAL SPREAD OF IMPLANTED IONS [J].

FURUKAWA, S ;

MATSUMURA, H .

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[5]

GRANT WA, 1976, ION BEAM SURFACE LAY, P235

[6]

Lindhard J., 1963, MAT FYS MEDD K DAN V, V33, P31

[7] HIGH-TEMPERATURE OXYGEN IMPLANTATION IN SILICON - SOI STRUCTURE FORMATION CHARACTERISTICS [J].

MAILLET, S ;

STUCK, R ;

GROB, JJ ;

GOLANSKI, A ;

PANTEL, R ;

PERIO, A .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1987, 19-20 :294-298

[8]

MAYER JW, 1977, ION BEAM HDB MATERIA, P243

[9]

MCKENNA C, 1986, SEMICOND INT APR, P101

[10] LOW-CONCENTRATION OXYGEN DEPTH PROFILING BY O-16(D,ALPHA)N-14 REACTION [J].

PICRAUX, ST .

NUCLEAR INSTRUMENTS & METHODS, 1978, 149 (1-3) :289-294

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