HIGH-TEMPERATURE OXYGEN IMPLANTATION IN SILICON - SOI STRUCTURE FORMATION CHARACTERISTICS

被引:21
作者
MAILLET, S [1 ]
STUCK, R [1 ]
GROB, JJ [1 ]
GOLANSKI, A [1 ]
PANTEL, R [1 ]
PERIO, A [1 ]
机构
[1] CTR NATL ETUDES TELECOMMUN, F-38243 MEYLAN, FRANCE
关键词
D O I
10.1016/S0168-583X(87)80060-5
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
引用
收藏
页码:294 / 298
页数:5
相关论文
共 18 条
[1]   EARLY STAGES OF OXYGEN SEGREGATION AND PRECIPITATION IN SILICON [J].
BOURRET, A ;
THIBAULTDESSEAUX, J ;
SEIDMAN, DN .
JOURNAL OF APPLIED PHYSICS, 1984, 55 (04) :825-836
[2]   INFLUENCE OF OXYGEN ON SILICON RESISTIVITY [J].
CAZCARRA, V ;
ZUNINO, P .
JOURNAL OF APPLIED PHYSICS, 1980, 51 (08) :4206-4211
[3]   HIGH-QUALITY SI-ON-SIO2 FILMS BY LARGE DOSE OXYGEN IMPLANTATION AND LAMP ANNEALING [J].
CELLER, GK ;
HEMMENT, PLF ;
WEST, KW ;
GIBSON, JM .
APPLIED PHYSICS LETTERS, 1986, 48 (08) :532-534
[4]   OXYGEN DISTRIBUTIONS IN SYNTHESIZED SIO2 LAYERS FORMED BY HIGH-DOSE O+ IMPLANTATION INTO SILICON [J].
HEMMENT, PLF ;
MAYDELLONDRUSZ, E ;
STEVENS, KG ;
KILNER, JA ;
BUTCHER, J .
VACUUM, 1984, 34 (1-2) :203-208
[6]  
ITOH Y, 1985, JPN J APPL PHYS, V23, P279
[7]  
IZUMI K, 1984, MATER RES SOC S P, V23, P443
[8]   MICROSTRUCTURE OF SILICON IMPLANTED WITH HIGH-DOSE OXYGEN IONS [J].
JAUSSAUD, C ;
STOEMENOS, J ;
MARGAIL, J ;
DUPUY, M ;
BLANCHARD, B ;
BRUEL, M .
APPLIED PHYSICS LETTERS, 1985, 46 (11) :1064-1066
[9]   SIMS ANALYSIS OF SILICON INSULATOR STRUCTURES FORMED BY HIGH-DOSE O+ IMPLANTATION INTO SILICON [J].
KILNER, JA ;
LITTLEWOOD, SD ;
HEMMENT, PLF ;
MAYDELLONDRUSZ, E ;
STEPHENS, KG .
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH, 1983, 218 (1-3) :573-578
[10]   SECONDARY ION QUADRUPOLE MASS-SPECTROMETER FOR DEPTH PROFILING-DESIGN AND PERFORMANCE EVALUATION [J].
MAGEE, CW ;
HARRINGTON, WL ;
HONIG, RE .
REVIEW OF SCIENTIFIC INSTRUMENTS, 1978, 49 (04) :477-485