THE GROWTH OF METASTABLE, HETERO-EPITAXIAL FILMS OF ALPHA-SN BY METAL BEAM EPITAXY

被引：212

作者：

FARROW, RFC

ROBERTSON, DS

WILLIAMS, GM

CULLIS, AG

JONES, GR

YOUNG, IM

DENNIS, PNJ

机构：

来源：

JOURNAL OF CRYSTAL GROWTH | 1981年 / 54卷 / 03期

关键词：

D O I：

10.1016/0022-0248(81)90506-6

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

收藏

页码：507 / 518

页数：12

相关论文

共 26 条

[11] HIGH-TEMPERATURE HIGH-PURITY SOURCE FOR METAL BEAM EPITAXY
FARROW, RFC
WILLIAMS, GM
[J]. THIN SOLID FILMS, 1978, 55 (02) : 303 - 315
[12] EPITAXIAL-GROWTH OF AG FILMS ON INP(001) BY ATOMIC-BEAM EPITAXY IN ULTRAHIGH-VACUUM
FARROW, RFC
[J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1977, 10 (10) : L135 - L138
[13] FARROW RFC, 1979, THIN SOLID FILMS, V58, P189, DOI 10.1016/0040-6090(79)90235-9
[14] STRUCTURAL AND ELECTRICAL-PROPERTIES OF EPITAXIAL METAL-FILMS GROWN ON ARGON ION BOMBARDED AND ANNEALED (001)INP
FARROW, RFC
CULLIS, AG
GRANT, AJ
PATTISON, JE
[J]. JOURNAL OF CRYSTAL GROWTH, 1978, 45 (01) : 292 - 301
[15] FARROW RFC, 1977, CRYSTAL GROWTH MATER
[16] BAND STRUCTURE OF GRAY TIN
GROVES, S
PAUL, W
[J]. PHYSICAL REVIEW LETTERS, 1963, 11 (05) : 194 - &
[17] MEASUREMENT OF STRAIN AND LATTICE-PARAMETER IN EPITAXIC LAYERS
HART, M
LLOYD, KH
[J]. JOURNAL OF APPLIED CRYSTALLOGRAPHY, 1975, 8 (FEB1) : 42 - 44
[18] DETERMINATION OF LATTICE-CONSTANT OF EPITAXIAL LAYERS OF III-V COMPOUNDS
HORNSTRA, J
BARTELS, WJ
[J]. JOURNAL OF CRYSTAL GROWTH, 1978, 44 (05) : 513 - 517
[19] JONES GL, UNPUBLISHED
[20] INFLUENCE OF INTERMEDIATE ADSORBED LAYERS ON THE METAL CONTACTS FORMED TO INDIUM-PHOSPHIDE CRYSTALS
MONTGOMERY, V
MCKINLEY, A
WILLIAMS, RH
[J]. SURFACE SCIENCE, 1979, 89 (1-3) : 635 - 642