CHARACTERIZATION OF TINX AND ZRNX MULTILAYERED STRUCTURES BY AUGER-ELECTRON SPECTROSCOPY

被引：7

作者：

PANJAN, P ^{[1
]}

NAVINSEK, B ^{[1
]}

ZABKAR, A ^{[1
]}

FISER, J ^{[1
]}

ZALAR, A ^{[1
]}

机构：

[1] INST ELECTR & VACUUM TECH, YU-61000 LJUBLJANA, YUGOSLAVIA

来源：

VACUUM | 1990年 / 40卷 / 1-2期

关键词：

D O I：

10.1016/0042-207X(90)90125-I

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Different partial pressures of nitrogen were used to deposit samples in single and multilayer from with various atomic ratios of Ti and Zr to N. Subsequently the structures were analysed by AES spectrometry and the composition was determined. Specific resistivity, temperature coefficient of resistivity, optical reflectivity and deposition rate of TiNx and ZrNx films as a function nitrogen partial pressure are also presented. © 1990.

引用

页码：81 / 84

页数：4

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