TITANIUM-SILICON SCHOTTKY BARRIER DIODES

[1] ATALLA MM, 1966, MICROELECTRON S MUNI, P123

[2] SHOT NOISE IN SILICON SCHOTTKY BARRIER DIODES [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1968, ED15 (10) : 761 - &

[3] EQUALITY OF TEMPERATURE DEPENDENCE OF GOLD-SILICON SURFACE BARRIER + SILICON ENERGY GAP IN AU N-TYPE SI DIODES ( PHOTOEMISSION THRESHOLD ANALYSIS 100-370 DEGREES K E ) [J]. APPLIED PHYSICS LETTERS, 1964, 4 (05) : 91 - &

[4] CURRENT TRANSPORT IN METAL-SEMICONDUCTOR BARRIERS [J]. SOLID-STATE ELECTRONICS, 1966, 9 (11-1) : 1035 - &

[5] METAL-SEMICONDUCTOR BARRIER HEIGHT MEASUREMENT BY DIFFERENTIAL CAPACITANCE METHOD - 1 CARRIER SYSTEM [J]. JOURNAL OF APPLIED PHYSICS, 1963, 34 (02) : 329 - &

[6] REDISTRIBUTION OF ACCEPTOR + DONOR IMPURITIES DURING THERMAL OXIDATION OF SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1964, 35 (09) : 2695 - &

[7] INVESTIGATION OF THERMALLY OXIDISED SILICON SURFACES USING METAL-OXIDE-SEMICONDUCTOR STRUCTURES [J]. SOLID-STATE ELECTRONICS, 1965, 8 (02) : 145 - +

[8] HENISCH HK, 1957, RECTIFYING SEMICONDU, P196

[9] SILICON SCHOTTKY BARRIER DIODE WITH NEAR-IDEAL I-V CHARACTERISTICS [J]. BELL SYSTEM TECHNICAL JOURNAL, 1968, 47 (02): : 195 - +

[10] FERMI LEVEL POSITION AT SEMICONDUCTOR SURFACES [J]. PHYSICAL REVIEW LETTERS, 1963, 10 (11) : 471 - &

[1] ATALLA MM, 1966, MICROELECTRON S MUNI, P123

[2] SHOT NOISE IN SILICON SCHOTTKY BARRIER DIODES [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1968, ED15 (10) : 761 - &

[3] EQUALITY OF TEMPERATURE DEPENDENCE OF GOLD-SILICON SURFACE BARRIER + SILICON ENERGY GAP IN AU N-TYPE SI DIODES ( PHOTOEMISSION THRESHOLD ANALYSIS 100-370 DEGREES K E ) [J]. APPLIED PHYSICS LETTERS, 1964, 4 (05) : 91 - &

[4] CURRENT TRANSPORT IN METAL-SEMICONDUCTOR BARRIERS [J]. SOLID-STATE ELECTRONICS, 1966, 9 (11-1) : 1035 - &

[5] METAL-SEMICONDUCTOR BARRIER HEIGHT MEASUREMENT BY DIFFERENTIAL CAPACITANCE METHOD - 1 CARRIER SYSTEM [J]. JOURNAL OF APPLIED PHYSICS, 1963, 34 (02) : 329 - &

[6] REDISTRIBUTION OF ACCEPTOR + DONOR IMPURITIES DURING THERMAL OXIDATION OF SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1964, 35 (09) : 2695 - &

[7] INVESTIGATION OF THERMALLY OXIDISED SILICON SURFACES USING METAL-OXIDE-SEMICONDUCTOR STRUCTURES [J]. SOLID-STATE ELECTRONICS, 1965, 8 (02) : 145 - +

[8] HENISCH HK, 1957, RECTIFYING SEMICONDU, P196

[9] SILICON SCHOTTKY BARRIER DIODE WITH NEAR-IDEAL I-V CHARACTERISTICS [J]. BELL SYSTEM TECHNICAL JOURNAL, 1968, 47 (02): : 195 - +

[10] FERMI LEVEL POSITION AT SEMICONDUCTOR SURFACES [J]. PHYSICAL REVIEW LETTERS, 1963, 10 (11) : 471 - &