MEASUREMENT OF NEGATIVE DIFFERENTIAL CONDUCTANCE TO 40 GHZ FOR VERTICALLY INTEGRATED RESONANT TUNNELING DIODES

被引：3

作者：

MOUNAIX, P ^{[1
]}

BEDU, P ^{[1
]}

LIPPENS, D ^{[1
]}

BARBIER, E ^{[1
]}

机构：

[1] LAB CENT RECH THOMSON,F-91401 ORSAY,FRANCE

来源：

ELECTRONICS LETTERS | 1991年 / 27卷 / 15期

关键词：

TUNNEL DIODES; DIODES; SEMICONDUCTOR DEVICES AND MATERIALS;

D O I：

10.1049/el:19910855

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

For the first time a direct measurement of the negative differential resistance of resonant tunnelling diodes to 40 GHz is described. To attain such a high frequency, high current double barrier heterostructures were vertically integrated so that very small area samples with low-parasitic elements can be implemented.

引用

页码：1358 / 1360

页数：3

共 8 条

[1] FUNDAMENTAL OSCILLATIONS UP TO 200 GHZ IN RESONANT TUNNELING DIODES AND NEW ESTIMATES OF THEIR MAXIMUM OSCILLATION FREQUENCY FROM STATIONARY-STATE TUNNELING THEORY [J].