DEFECTS IN MOLECULAR-BEAM EPITAXIAL GAAS GROWN AT LOW-TEMPERATURES

被引：8

作者：

HOZHABRI, N ^{[1
]}

SHARMA, SC ^{[1
]}

PATHAK, RN ^{[1
]}

ALAVI, K ^{[1
]}

机构：

[1] UNIV TEXAS,DEPT ELECT ENGN,NSF CTR ADV ELECTRON DEVICES & SYST,ARLINGTON,TX 76019

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1994年 / 23卷 / 06期

关键词：

DEFECTS; LT-GAAS; MOLECULAR BEAM EPITAXY (MBE);

D O I：

10.1007/BF02670654

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have utilized a variable energy positron beam and infrared transmission spectroscopy to study defects in GaAs epilayers grown at low temperatures (LT-GaAs) by molecular beam epitaxy. We have measured the Doppler broadening of the positron-electron annihilation gamma ray spectra as a function of positron implantation energy. From these measurements, we have obtained results for the depth profiles of Ga monovacancies in unannealed LT-GaAs and Ga monovacancies and arsenic cluster related defects in annealed LT-Ga-As. We have also studied the effects of the Si impurities in annealed LT-GaAs. The infrared transmission measurements on unannealed LT-GaAs furnish a broad defect band, related to As antisites, centered at 0.370 eV below the conduction band.

引用

页码：519 / 523

页数：5

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