SHIFTED X-RAY PHOTOELECTRON PEAK IN MOLECULAR-BEAM EPITAXIAL GAAS GROWN AT 200-DEGREES C

被引：18

作者：

LOOK, DC

GRANT, JT

SIZELOVE, JR

机构：

[1] UNIV DAYTON,RES INST,DAYTON,OH 45469

[2] WRIGHT LAB,WL ELRA,WRIGHT PATTERSON AFB,OH 45433

来源：

APPLIED PHYSICS LETTERS | 1992年 / 61卷 / 11期

关键词：

D O I：

10.1063/1.107582

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

X-ray photoelectron spectroscopic results show that molecular beam epitaxial GaAs grown at 200-degrees-C has a reduced effective surface potential energy, about 0.5 eV, compared with the usual 0.7 eV. A Poisson analysis of the data, using parameters from Hall effect and absorption measurements, requires that the Fermi-level-controlling defect in this material must have a significantly lower activation energy than that of EL2, an unexpected result.

引用

收藏

页码：1329 / 1331

页数：3

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