EFFECTS OF SUBSTRATE MISORIENTATION ON ANISOTROPIC ELECTRON-TRANSPORT IN INGAAS/GAAS HETEROSTRUCTURES

被引：8

作者：

SUN, Q

LACELLE, C

MORRIS, D

BUCHANAN, M

MARSHALL, P

CHOWCHONG, P

ROTH, AP

机构：

[1] National Research Council, Ottawa

来源：

APPLIED PHYSICS LETTERS | 1991年 / 59卷 / 11期

关键词：

D O I：

10.1063/1.105308

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The effects of substrate misorientation on anisotropic electrical properties of thick InGaAs layers grown on GaAs by low-pressure metalorganic vapor phase epitaxy are studied. Hall bar samples oriented along [110] and [110BAR] were cut from layers grown simultaneously on substrates oriented (a) exactly on (001) and (b) at 2-degrees off (001) towards [011]. In layers grown on (001) oriented substrates a very large mobility anisotropy (mu[110]/mu[110BAR] almost-equal-to 1000) is observed and attributed mainly to a lattice mismatch induced anisotropy. For the misoriented substrates, the average electron mobility increases by an order of magnitude and shows only a small residual anisotropy in the opposite direction (mu[110]/mu[110BAR] almost-equal-to 0.7).

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页码：1359 / 1361

页数：3

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