SB-CAPPING AND DECAPPING OF MBE-GROWN GASB(100)

被引：12

作者：

DUMAS, M ^{[1
]}

NOUAOURA, M ^{[1
]}

BERTRU, N ^{[1
]}

LASSABATERE, L ^{[1
]}

CHEN, W ^{[1
]}

KAHN, A ^{[1
]}

机构：

[1] PRINCETON UNIV,DEPT ELECT ENGN,PRINCETON,NJ 08544

来源：

SURFACE SCIENCE | 1992年 / 262卷 / 03期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1016/0039-6028(92)90114-L

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

We present a study of GaSb(100) surfaces grown by molecular beam epitaxy, protected by an Sb cap during ambient storage, and annealed in ultra-high vacuum. The surface structure, composition and electronic transitions are investigated with low energy electron diffraction, Auger electron spectroscopy, and electron energy loss spectroscopy. Successful Sb-decapping is achieved by annealing at 300-degrees-C for 30 min. It leads to a (2 x 3)-c(2 x 6) reconstructed surface with less residual damage and higher Sb concentration than surfaces prepared by sputtering and annealing.

引用

页码：L91 / L95

页数：5

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