共 14 条
- [1] THRESHOLD ENERGIES FOR ELECTRON-HOLE PAIR PRODUCTION BY IMPACT IONIZATION IN SEMICONDUCTORS [J]. PHYSICAL REVIEW B, 1972, 5 (06): : 2267 - &
- [3] INGAAS DETECTOR FOR 1.0-1.7-MUM WAVELENGTH RANGE [J]. APPLIED PHYSICS LETTERS, 1978, 32 (07) : 446 - 448
- [4] TEMPERATURE DEPENDENCE OF IONIZATION RATES IN GE [J]. JOURNAL OF APPLIED PHYSICS, 1971, 42 (12) : 5198 - &
- [6] IMPACT IONIZATION RATIO IN IN0.73GA0.27AS0.57P0.43 [J]. ELECTRONICS LETTERS, 1978, 14 (14) : 418 - 419
- [8] 1.0-1.4-MU-M HIGH-SPEED AVALANCHE PHOTO-DIODES [J]. APPLIED PHYSICS LETTERS, 1978, 33 (05) : 416 - 417