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MINORITY-CARRIER LIFETIME IMPROVEMENT IN SILICON THROUGH LASER DAMAGE GETTERING

被引：20
作者：
YANG, KH
SCHWUTTKE, GH
机构：
来源：
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1980年 / 58卷 / 01期
关键词：
D O I：
10.1002/pssa.2210580115
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：127 / 134
页数：8
相关论文
共 6 条
[1]   NEW FAST TECHNIQUE FOR LARGE-SCALE MEASUREMENTS OF GENERATION LIFETIME IN SEMICONDUCTORS [J].
FAHRNER, WR ;
SCHNEIDER, CP .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1976, 123 (01) :100-105
[2]  
Masters B. J., 1970, Radiation Effects, V6, P57, DOI 10.1080/00337577008235046
[3]   ELIMINATION OF PROCESS-INDUCED STACKING-FAULTS BY PREOXIDATION GETTERING OF SI WAFERS .2. SI-3 N-4 PROCESS [J].
PETROFF, PM ;
ROZGONYI, GA ;
SHENG, TT .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1976, 123 (04) :565-570
[4]  
POMERANTZ D, 1964, J APPL PHYS, V35, P695
[5]   REFLECTION X-RAY TOPOGRAPHY OF OXIDATION-INDUCED STACKING-FAULTS IN SILICON [J].
OPPOLZER, H .
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1977, 42 (02) :K91-&
[6]   DIRECT COMPARISON OF ION-DAMAGE GETTERING AND PHOSPHORUS-DIFFUSION GETTERING OF AU IN SI [J].
SEIDEL, TE ;
MEEK, RL ;
CULLIS, AG .
JOURNAL OF APPLIED PHYSICS, 1975, 46 (02) :600-609
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